Theory and operation of cold field-effect transistor (FET) external parasitic parameter extraction /

Bibliographic Details
Main Author:	Huebschman, Benjamin D.
Corporate Author:	U.S. Army Research Laboratory
Other Authors:	Shah, Pankaj B., Del Rosario, Romeo
Format:	Government Document Book
Language:	English
Published:	Adelphi, MD : Army Research Laboratory, [2009]
Series:	ARL-TR (Aberdeen Proving Ground, Md.) ; 4812. ARL/TR ; 4812.
Subjects:	Field-effect transistors.
Online Access:	https://purl.fdlp.gov/GPO/LPS115049

Description
Item Description:	Title from title screen (viewed on July 20, 2009). "May 2009." Electronic resource.
Physical Description:	iv, 16 pages : digital, PDF file.
Format:	Mode of access: Internet from the ARL web site. Address as of 7/20/09: http://www.arl.army.mil/arlreports/2009/ARL-TR-4812.pdf ; current access is available via PURL.