Theory and operation of cold field-effect transistor (FET) external parasitic parameter extraction /

Bibliographic Details

Main Author:	Huebschman, Benjamin D.
Corporate Author:	U.S. Army Research Laboratory
Other Authors:	Shah, Pankaj B., Del Rosario, Romeo
Format:	Government Document Book
Language:	English
Published:	Adelphi, MD : Army Research Laboratory, [2009]
Series:	ARL-TR (Aberdeen Proving Ground, Md.) ; 4812. ARL/TR ; 4812.
Subjects:	Field-effect transistors.
Online Access:	https://purl.fdlp.gov/GPO/LPS115049