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Defects in microelectronic materials and devices /

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Bibliographic Details
Other Authors: Fleetwood, D. M. (Dan M.), Pantelides, Sokrates T., Schrimpf, Ronald Donald
Format: Book
Language:English
Published: Boca Raton : CRC Press, [2009]
Subjects:
Microelectronics > Materials > Testing.
Metal oxide semiconductor field-effect transistors > Testing.
Integrated circuits > Defects.
Online Access:Table of contents only
Table of Contents:
  • Defects in ultra-shallow junctions / Mark E. Law ... [et al.]
  • Hydrogen-related defects in silicon, germanium, and silicon-germanium alloys / A.R. Parker, V.P. Markevich, and L. Dobaczewski
  • Defects in strained-Si MOSFETs / Yongke Sun and Scott E. Thompson
  • The effect of defects on electron transport in nanometer-scale electronic devices: impurities and interface roughness / M. V. Fischetti and S. Jin
  • Electrical characterization of defects in gate dielectrics / Dieter K. Schroder
  • Dominating defects in the MOS system: P and E centers / Patrick M. Lenahan
  • Oxide traps, border traps, and interface traps in SiO / Daniel M. Fleetwood, Sokrates T. Pantelides, and Ronald D. Schrimpf
  • From 3D imaging of atoms to macroscopic device properties / S.J. Pennycok ... [et al.]
  • Defect energy levels in HfO and related high-k gate oxides / J. Robertson, K. Xiong, and K. Tse
  • Spectroscopic studies of electrically active defects in high-K gate dielectrics / Gerald Lucovsky
  • Defects in CMOS gate dielectrics / Eric Gerfunkel, Jacob Gavarin, and Gennadi Bersuker
  • Negative bias temperature instabilities in high-k gate dielectrics / M. Houssa ... [et al.]
  • Defect formation and annihilation in electronic devices and the role of hydrogen / Leonidas Tseteris ... [et al.]
  • Toward engineering modeling of negative bias temperature instability / Tibor Grasser, Wolfgang Goes, and Ben Kaczer
  • Wear-out and time-dependent dielectric breakdown in silicon oxides / John S. Suehle
  • Defects associated with dielectric breakdown in Sio-based gate dielectrics / Jordi Sune and Ernest Y. Wu
  • Defects in thin and ultrathin silicon dioxides / Giorgio Cellere, Simone Geradin, and Alessandro Paccagnella
  • Structural defects in SiO-Si caused by ion bombardment / Antoine D. Touboul ... [et al.]
  • Impact of radiation-induced defects on bipolar device operation / Ronald D. Schrimpf ... [et al.]
  • Silicon dioxide-silicon carbide interfaces: current status and recent advances / S. Dhar ... [et al.]
  • Defects in SiC / E. Janzen ... [et al.]
  • Defects in gallium arsenide / J. C. Bourgoin and J. J. von Bardeleben
  • Appendix: Selected high-impact journal articles on defects in microelectronic materials and devices.