Low temperature photoluminescence and leakage current characteristics of InAs-GaSb superlattice photodiodes /

Bibliographic Details

Corporate Author:	U.S. Army Research Laboratory
Other Authors:	Folkes, P. A.
Format:	Government Document eBook
Language:	English
Published:	Adelphi, MD : Army Research Laboratory, [2008]
Series:	ARL-TR (Aberdeen Proving Ground, Md.) ; 4545.
Subjects:	Chemistry, Inorganic. Photodiodes. Photoluminescence.
Online Access:	https://purl.fdlp.gov/GPO/LPS113689