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Electron beam induced damage in PECVD Si₃N₄ and SiO₂ films on InP /

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Bibliographic Details
Corporate Authors: Electrochemical Society, United States. National Aeronautics and Space Administration, Symposium on Dielectric Films on Compound Semiconductors
Other Authors: Pantic, Dragan M.
Format: Government Document Conference Proceeding Microform Book
Language:English
Published: [Washington, D.C.] : NASA ; [1990]
Series:NASA technical memorandum ; 102544.
Subjects:
Dielectric films.
Capacitance-voltage characteristics.
Electron beams.
Indium phosphides.
Irradiation.
Phosphorus.
Plasmas (Physics)
Radiation damage.
Vapor deposition.
Online Access:https://purl.fdlp.gov/GPO/LPS69699
Description
Item Description:Cover title.
Microform.
Physical Description:15 pages : illustrations ; 28 cm.
Also available via Internet from the NASA Technical Report Server web site. Address as of 5/9/06: http://ntrs.nasa.gov/archive/nasa/casi.ntrs.nasa.gov/19900011077%5F1990011077.pdf ; current access is available via PURL.
Bibliography:Includes bibliographical references (page 13).