Electron beam induced damage in PECVD Si₃N₄ and SiO₂ films on InP /

Bibliographic Details
Corporate Authors:	Electrochemical Society, United States. National Aeronautics and Space Administration, Symposium on Dielectric Films on Compound Semiconductors
Other Authors:	Pantic, Dragan M.
Format:	Government Document Conference Proceeding Microform Book
Language:	English
Published:	[Washington, D.C.] : NASA ; [1990]
Series:	NASA technical memorandum ; 102544.
Subjects:	Dielectric films. Capacitance-voltage characteristics. Electron beams. Indium phosphides. Irradiation. Phosphorus. Plasmas (Physics) Radiation damage. Vapor deposition.
Online Access:	https://purl.fdlp.gov/GPO/LPS69699

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