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Basic equations for the modeling of gallium nitride (GaN) high electron mobility transistors (HEMTs) /

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Bibliographic Details
Main Author: Freeman, Jon C.
Corporate Author: NASA Glenn Research Center
Format: Government Document Book
Language:English
Published: [Cleveland, Ohio] : Hanover, MD : National Aeronautics and Space Administration, Glenn Research Center ; Available from NASA Center for Aerospace Information ; [2003]
Series:NASA technical memorandum ; 211983.
Subjects:
GALLIUM NITRIDES.
Field effect transistors.
High electron mobility transistors.
Online Access:https://purl.fdlp.gov/GPO/LPS42594
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by Freeman, Jon C.
Published 2003
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