Basic equations for the modeling of gallium nitride (GaN) high electron mobility transistors (HEMTs) /

Bibliographic Details

Main Author:	Freeman, Jon C.
Corporate Author:	NASA Glenn Research Center
Format:	Government Document Book
Language:	English
Published:	[Cleveland, Ohio] : Hanover, MD : National Aeronautics and Space Administration, Glenn Research Center ; Available from NASA Center for Aerospace Information ; [2003]
Series:	NASA technical memorandum ; 211983.
Subjects:	GALLIUM NITRIDES. Field effect transistors. High electron mobility transistors.
Online Access:	https://purl.fdlp.gov/GPO/LPS42594