Numerical simulations of quantum devices /

This work has been motivated by the tremendous effort toward the next generation of electron devices that will replace the present CMOS (Complementary Metal Oxide Semiconductor). Non-equilibrium Green's function formalism (NEGF) and empirical tight-binding (ETB) methods have been utilized in t...

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Bibliographic Details

Main Author:	Sandu, Titus
Format:	Thesis Book
Language:	English
Published:	[Place of publication not identified] : [publisher not identified] ; 2002.
Subjects:	Major physics.
Online Access:	http://proxy.library.tamu.edu/login?url=http://proquest.umi.com/pqdweb?did=765105841&sid=1&Fmt=2&clientId=2945&RQT=309&VName=PQD