Doped tantalum oxide high K dielectric thin films /

To support the next generation of sub 100nm ULSI devices, a new high dielectric constant (K) thin film material must be developed. To reach these new smaller dimensions, thermally grown silicon dioxide would need to eventually be scaled to a thickness of around 1.2nm. At this thickness silicon dio...

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Bibliographic Details

Main Author:	Donnelly, Joseph Patrick, 1965-
Format:	Thesis eBook
Language:	English
Published:	[Place of publication not identified] : [publisher not identified] ; 2000.
Subjects:	Major electrical engineering.
Online Access:	Link to OAKTrust copy