Rutherford backscattering analysis of gallium implanted 316 stainless steel /

Ion implantation of Ga ions into 316 stainless steel was performed at fluences ranging from 8x10¹⁶ to 10¹⁸ ions/cm². The depth profile of Ga in the steel was analyzed via Rutherford Backscattering and ToFSIMS. The surface effects were characterized with SEM analysis. Results indicate that Ga satu...

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Bibliographic Details

Main Author:	Ortensi, Javier, 1973-
Format:	Thesis eBook
Language:	English
Published:	[Place of publication not identified] : [publisher not identified] ; 2000.
Subjects:	Major nuclear engineering.
Online Access:	Link to OAKTrust copy