Development of porous silicon field emitter arrays for vacuum microelectronic applications /
The electrical characteristics of silicon field y Microfilm Inc. emitter array (FEA), oxidation sharpened Si FEA porous silicon (PS) FEA, and sinicized PS FEA were studied. PS layers were formed by either anodization or stain etching. The modified surface became roughened and had a high density of n...
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| Format: | Thesis Book |
| Language: | English |
| Published: |
[Place of publication not identified] :
[publisher not identified] ;
1998.
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| Subjects: | |
| Online Access: | http://proxy.library.tamu.edu/login?url=http://proquest.umi.com/pqdweb?did=733050271&sid=1&Fmt=2&clientId=2945&RQT=309&VName=PQD |
| Summary: | The electrical characteristics of silicon field y Microfilm Inc. emitter array (FEA), oxidation sharpened Si FEA porous silicon (PS) FEA, and sinicized PS FEA were studied. PS layers were formed by either anodization or stain etching. The modified surface became roughened and had a high density of nanoscale fibrils over the emitter surface. Forming a PS layer on the emitter contributed to the increase of the emission current and the reduction of operating voltage, the improvement of the uniformity of the emission characteristics between FEAS, and the stabilization of the emission current. Gated PS FEA was fabricated using self aligned process and had similar enhancements of emission properties as its two terminal operation. Surface morphologies of PS layer formed with different conditions were studied with atomic force microscope (AFM). TEM studies of various microtips revealed the actual microstructures of the tip apex. |
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| Item Description: | Vita. "Major Subject: Electrical Engineering". |
| Physical Description: | xii, 131 leaves : illustrations ; 28 cm. |
| Bibliography: | Includes bibliographical references (leaves 123-127). |