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Ohmic contact metallization on p-type indium phosphide /

For the first time, a defect-assisted ohmic contact on p-InP is demonstrated. it is known that an ohmic contact with a low contact resistivity is difficult to achieve on p-InP due to the surface Fermi level pinning effect (-O.9 eV above valence band maximum). The commonly used Au-based contacts (su...

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Bibliographic Details
Main Author: Park, Moonho, 1959-
Format: Thesis eBook
Language:English
Published: [Place of publication not identified] : [publisher not identified] ; 1993.
Subjects:
Major electrical engineering.
Online Access:Link to OAKTrust copy

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