Ohmic contact metallization on p-type indium phosphide /

For the first time, a defect-assisted ohmic contact on p-InP is demonstrated. it is known that an ohmic contact with a low contact resistivity is difficult to achieve on p-InP due to the surface Fermi level pinning effect (-O.9 eV above valence band maximum). The commonly used Au-based contacts (su...

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Bibliographic Details

Main Author:	Park, Moonho, 1959-
Format:	Thesis eBook
Language:	English
Published:	[Place of publication not identified] : [publisher not identified] ; 1993.
Subjects:	Major electrical engineering.
Online Access:	Link to OAKTrust copy