Medium energy ion implantation of Germanium into heated <111> Silicon /

Medium energy ion implantation of Ge into heated <II I> Si was investigated. legh fluence implants of Ge were made at energies of 40 or 60 keV into <III> Si substrates at room temperature or heated to 300'C or higher. Several implants were made per sample to assure uniformity of ma...

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Bibliographic Details

Main Author:	McCoy, John Curtis, 1958-
Format:	Thesis eBook
Language:	English
Published:	[Place of publication not identified] : [publisher not identified] ; 1993.
Subjects:	Major nuclear engineering.
Online Access:	Link to OAKTrust copy