Gas source molecular beam epitaxy : growth and properties of phosphorus containing III-V heterostructures /

Bibliographic Details

Main Author:	Panish, M. B.
Other Authors:	Temkin, H.
Format:	Book
Language:	English
Published:	Berlin ; New York : Springer-Verlag, [1993]
Series:	Springer series in materials science ; 26.
Subjects:	Molecular beam epitaxy. Gallium arsenide semiconductors. Semiconductors