Ion beam self annealing in thin silicon films /
| Main Author: | |
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| Other Authors: | , , |
| Format: | Thesis Book |
| Language: | English |
| Published: |
1990.
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| Subjects: | |
| Online Access: | ProQuest, Abstract Link to OAKTrust copy |
| Abstract: | The self annealing phenomenon was investigated utilizing 1 cm diameter, 1 μm thick, <100> oriented silicon films. An experimental study was conducted to establish the viability of this process and its parametric limitations. A strong correlation was found between the implantation flux, the sample temperature and the residual lattice damage. Two distinct temperature regions above and below 330 °C were observed where the residual lattice damage decreased as a function of temperature. This behavior was interpreted to indicate that the self annealing process is controlled by two thermally activated processes of differing activation energies. The activation energies were determined to be 1.5 eV and 0.1 eV for the high and low temperature regions, respectively. Since the implantation flux controlled the power density and therefore the sample temperature during implantation, various samples were implanted in a radiative oven at elevated temperatures to separate the flux and temperature effects. These samples exhibited lower lattice damage than their counterparts implanted with the same flux at room temperature but high lattice damage than samples implanted at lower temperature and higher flux. In order to determine the effect of the sample thickness on the self annealing process, bulk samples were implanted at high fluxes and elevated temperatures. These samples exhibited a small increase in residual lattice damage. The effect of crystalline orientation on self annealing was determined by implanting a sample at high flux rate in an aligned direction. The sample exhibited a small increase in lattice damage indicating that the reduction in nuclear stopping was deleterious to the self annealing process. |
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| Item Description: | Typescript (photocopy). Vita. "Major subject: Nuclear engineering." |
| Physical Description: | xiii, 129 leaves : illustrations ; 29 cm |
| Bibliography: | Includes bibliographical references. |