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Structure and properties of dislocations in semiconductors 1989 : proceedings of the Sixth International Symposium on the Structure and Properties of Dislocations in Semiconductors held at the University of Oxford, 5-8 April 1989 /

Bibliographic Details
Corporate Author: International Symposium on the Structure and Properties of Dislocations in Semiconductors University of Oxford
Other Authors: Roberts, S. G., Holt, D. B., Wilshaw, P. R.
Format: Conference Proceeding Book
Language:English
Published: Bristol ; New York : Institute of Physics, [1989]
Series:Institute of Physics conference series ; no. 104.
Subjects:
Semiconductors > Defects > Congresses.
Dislocations in crystals > Congresses.
Dislocation in metals > Congresses.
Description
Physical Description:xii, 470 pages : illustrations ; 24 cm.
Bibliography:Includes bibliographical references and indexes.
ISBN:0854980601