Structure and properties of dislocations in semiconductors 1989 : proceedings of the Sixth International Symposium on the Structure and Properties of Dislocations in Semiconductors held at the University of Oxford, 5-8 April 1989 /

Bibliographic Details
Corporate Author:	International Symposium on the Structure and Properties of Dislocations in Semiconductors University of Oxford
Other Authors:	Roberts, S. G., Holt, D. B., Wilshaw, P. R.
Format:	Conference Proceeding Book
Language:	English
Published:	Bristol ; New York : Institute of Physics, [1989]
Series:	Institute of Physics conference series ; no. 104.
Subjects:	Semiconductors > Defects > Congresses. Dislocations in crystals > Congresses. Dislocation in metals > Congresses.

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