Process and device simulation for MOS-VLSI circuits /

Bibliographic Details
Corporate Author:	NATO Advanced Study Institute on Process and Device Simulation for MOS-VLSI Circuits Urbino, Italy
Other Authors:	Antognetti, Paolo
Format:	Conference Proceeding Book
Language:	English
Published:	Boston : Nijhoff ; 1983.
Series:	NATO ASI series. Applied sciences ; no. 62.
Subjects:	Integrated circuits > Very large scale integration > Simulation methods > Congresses. Metal oxide semiconductors > Simulation methods > Congresses.

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