Nanoelectronics : physics, materials and devices /

Approx.528 pagesApprox.528 pages.

Bibliographic Details
Corporate Author:	ScienceDirect (Online service)
Other Authors:	Sarkar, Angsuman (Editor), Sarkar, Chandan Kumar (Editor), Deyasi, Arpan, 1978- (Editor), De, Debashis (Editor), Benfdila, Arezki (Editor)
Format:	eBook
Language:	English
Published:	Amsterdam, Netherlands ; Oxford, United Kingdom ; Cambridge MA : Elsevier, [2023]
Series:	Micro & nano technologies.
Subjects:	Nanoelectronics. Nanoélectronique. Nanoelectronics Electronic books.
Online Access:	Connect to the full text of this electronic book

Table of Contents:

Front Cover
Nanoelectronics: Physics, Materials, and Devices
Copyright Page
Contents
List of contributors
Preface
1 Basics concepts of device physics
1.1 Introduction
1.2 How electrons move
1.2.1 Atomic structure
1.3 Mobility of carriers
1.3.1 Scattering
1.4 Concentration of carriers
1.5 Electric field
References
2 Scaling the MOSFET: detrimental short channel effects and mitigation techniques
2.1 Introduction
2.2 Carrier velocity saturation
2.3 Channel charge sharing
2.3.1 Long channel devices
2.3.2 Short channel devices
2.4 Drain-induced barrier lowering
2.5 Punch-through
2.6 Hot carrier effect/hot carrier injection
2.7 Velocity overshoot
2.8 Gate-induced drain leakage
2.9 Direct source to drain tunneling
2.10 Mitigation of short channel effects
2.10.1 Gate engineering
2.10.2 Dual-material gate
2.10.2.1 Structure and operation
2.10.2.2 Challenges
2.10.3 Multigate FETs
2.10.3.1 Structure
2.10.3.2 Operation
2.10.3.3 Challenges
2.10.4 Channel engineering
2.10.4.1 Structure
2.10.4.2 Operation
2.10.4.3 Challenges
2.10.5 Buried oxide engineering
2.10.5.1 Ground plane FDSOI MOSFET
2.10.5.1.1 Structure and operation
2.10.6 Alternate conduction mechanism
2.10.6.1 Tunneling
2.10.6.2 Impact ionization
2.11 Conclusion
References
3 Alternate device architectures to mitigate challenges
3.1 Introduction
3.2 Silicon on insulator and silicon on nothing concepts
3.2.1 Silicon on insulator
3.2.2 Silicon on nothing
3.3 Nonuniform doping and pocket engineering, halo doping, and reverse short channel effects
3.3.1 Nonuniform doping
3.3.2 Halo/pocket doping profile
3.3.3 Reverse short channel effect
3.4 Gate material engineering: dual material gate, triple material gate.
3.5 Use of high-K dielectric to reduce gate tunneling
3.6 Spacer engineering and underlap
3.7 Summary
References
4 Emerging field effect transistor architectures-part I
4.1 Introduction
4.2 Reconfigurable Schottky barrier field effect transistor
4.2.1 Physics of Schottky contact
4.2.2 Schottky barrier metal-oxide-semiconductor field-effect transistor
4.2.3 Operation principle of reconfigurable Schottky barrier field effect transistor
4.3 Spin field effect transistor
4.4 Tunnel field effect transistor
4.4.1 Methods for tunnel field effect transistors electrical performance improvement
4.4.1.1 Doping engineering
4.4.1.2 Material engineering
4.4.1.3 Structure and geometry engineering
4.4.1.3.1 Vertical tunnel field effect transistor
4.4.1.3.2 Electron-hole bilayer tunnel field effect transistor
4.5 Summary
References
5 Emerging FET architectures-part II
5.1 Introduction
5.2 Evolution of multiple gate MOSFET structure
5.2.1 Scaling constraints
5.2.2 Double gate MOSFET
5.3 Cylindrical and linearly graded gate MOSFET
5.4 Concept of ultra-thin body FETs
5.5 Recent trends in FinFET
5.6 Junctionless field effect transistors
5.7 Tunnel FET basic principle
5.7.1 Triple gate tunneling field effect transistors
5.7.2 Linearly graded tunneling field effect transistors
References
6 Novel materials-based devices to mitigate challenges
6.1 Introduction
6.2 Si electronics and scaling challenges
6.3 Alternative materials to sustain Moore's Law
6.4 High electron mobility transistors
6.4.1 Motivation
6.4.2 Principle, structure, and operation
6.4.3 Modeling: analytical and numerical
6.4.4 Current status of research
6.4.5 Applications
6.4.6 Future trends
6.5 Carbon nanotube
6.5.1 Structure and properties
6.5.2 Synthesis.
6.5.3 Carbon nanotube-based devices: progress and status
6.5.4 Applications
6.5.5 Future prospects
6.6 Graphene and other two-dimensional materials
6.6.1 Structure and properties
6.6.2 Synthesis
6.6.3 Graphene-based devices
6.6.4 Modeling and simulation
6.6.5 Applications
6.6.6 Recent progress
6.6.7 Future scenario
References
7 End of the road map: quest for beyond Si CMOS era
7.1 Introduction
7.2 Is it the end of Moore's Law?
7.3 Extending CMOS: beyond CMOS technologies
7.3.1 Tunnel FET: working principle and challenges
7.4 More than Moore: system-on-chip and system-on-package concepts
7.5 Conclusions
References
8 Low dimensional materials in nanoelectronics
8.1 Introduction to low dimensional semiconductors
8.2 Electronic properties of low dimensional semiconductors
8.2.1 Quantum well
8.2.2 Quantum wire
8.2.3 Quantum dot
8.3 Transition from large scale to (nanoscale) quantum regime
8.3.1 What is quantum regime?
8.3.2 Why is it necessary to understand the quantum behavior?
8.4 Quantum effects in nanoelectronic and opto-electronic properties of low dimensional semiconductors
8.4.1 Tunable bandgap
8.4.2 Blue shift in absorption spectra
8.4.3 Density of states
8.4.4 Large surface-to-volume ratio
8.4.5 Multiple exciton generation
8.5 Quantum effects in nanoscale electronics devices
8.5.1 Drift effects in nanoscale devices
8.5.1.1 Drift velocity overshoot
8.5.1.2 Ballistic transport
8.5.1.3 Hot electron effect
8.5.1.4 Hot phonon effects
8.5.2 Diffusion effects in nanoscale devices
8.5.2.1 Hot electron diffusion
8.5.2.2 Diffusion and reduced dimensionality
8.5.2.3 Size effects
8.5.3 Generation-recombination effects
8.5.3.1 G-R noise
8.5.3.2 Impact ionization
8.5.4 Solid state physics/electronics effects.
8.5.4.1 Quantum transport
8.5.4.2 Modeling approaches for nanoscale devices
8.5.5 Poisson equation-based approach
8.5.5.1 Coupled Schrodinger-Poisson equation-based approach
8.5.5.2 Future trends and scopes in nanodevices
References
9 An overview of nanoscale device fabrication technology-part I
9.1 Introduction
9.2 Manufacture of integrated circuits
9.2.1 Epitaxy
9.2.1.1 The Si/SiGe molecular beam epitaxy system
9.2.1.2 Solid source molecular beam epitaxy
9.2.1.3 Gas source molecular beam epitaxy
9.2.2 Atomic force microscopy: characterization
9.2.3 Atomic layer deposition
9.2.4 Lithography
9.2.4.1 Emerging lithography techniques
9.2.4.2 Electronic (e-beam) lithography
9.2.4.3 Multi e-beam lithography
9.2.5 Etching
9.2.5.1 Plasma etching
9.2.5.2 Mechanisms of plasma etching
9.3 Conclusion
References
10 An overview of nanoscale device fabrication technology-part II
10.1 Introduction
10.1.1 Motivation of the work
10.2 Optical proximity corrections
10.3 Nanopatterning using laser
10.4 Nanofabrication based on self-assembly
10.5 Alternative nanofabrication approaches for non-CMOS applications
10.6 Conclusion
References
11 Flexible electronics and devices with new materials
11.1 Introduction
11.2 Thin-film transistors
11.2.1 Structure
11.2.2 Operation
11.2.3 Performance
11.2.3.1 Electrical stability
11.2.3.2 Mechanical stability
11.2.4 a-Si:H thin-film transistors
11.2.5 Organic thin-film transistors
11.2.5.1 Organic semiconductors
11.2.5.2 Conduction mechanism
11.2.5.3 Charge transport in organic thin-film transistors
11.2.5.4 Performance
11.3 High-performance flexible thin-film transistors
11.4 Materials and devices for biodegradability and green electronics
11.5 Summary
References.
12 Emerging non-CMOS devices and technologies
12.1 Electrostatics-based electrical quantum-dot cellular automata
12.2 Tunneling-based nanodevices
12.2.1 Tunnel field-effect transistors
12.2.2 Single electron transistors
12.2.3 Resonant tunneling diodes
12.3 Magnetostatics based magnetic quantum-dot cellular automata
12.4 Conductive polymer-based devices: CMOS-nanowire-molecular structure
12.5 Electric dipole-based devices
12.5.1 Negative capacitance field-effect transistors
12.5.2 Spin-based device
12.5.3 Orbital state-based devices: Bisfield-effect transistors
12.6 Nanoionic switching devices
12.6.1 Introduction to nanoionic switching devices
12.6.2 Design of nanoionic switching devices
12.6.2.1 Electrochemical metallization type
12.6.2.2 Valance change memory type
12.6.3 Defect engineering of nanoionic switching devices
12.6.4 Application of nanoionics switching devices
12.6.5 Summary of nanoionic switching devices
12.7 Introduction to silicon nano tube field-effect transistor
12.8 Conclusion
References
13 Emerging memories and their applications in neuromorphic computing
13.1 Introduction
13.1.1 Resistive random access memory
13.1.2 Phase change memory
13.1.3 Ferroelectric resistive random access memory
13.2 Ferroelectric memories
13.2.1 Ferroelectric random-access memory
13.2.2 Ferroelectric field-effect transistor
13.3 Resistive memories
13.3.1 Resistance switching modes and mechanism
13.3.2 Multilevel resistive switching in resistive random access memory
13.3.3 Modeling of resistive memories
13.3.3.1 Stanford/ASU model
13.3.3.2 Physical electrothermal model
13.3.4 Applications of resistive random access memory
13.3.4.1 RRAM as binary logic circuit
13.3.4.2 RRAM as synaptic device
13.3.4.3 RRAM as nonvolatile memory.