2D materials for electronics, sensors and devices : synthesis, characterization, fabrication and application /

2D Materials for Electronics, Sensors and Devices: Synthesis, Characterization, Fabrication and Application provides an overview of various top-down and bottom-up synthesis techniques, along with stitching, stacking and stoichiometric control methods for different 2D materials and their heterostruct...

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Bibliographic Details
Corporate Author:	ScienceDirect (Online service)
Other Authors:	Das, Saptarshi (Editor)
Format:	eBook
Language:	English
Published:	Amsterdam : Elsevier, 2022.
Series:	Nanophotonique.
Subjects:	Two-dimensional materials. Detectors > Materials. Electronics > Materials. Matériaux bidimensionnels. Détecteurs > Matériaux. Capteurs > Matériaux. Électronique > Matériaux. Detectors > Materials Electronics > Materials Two-dimensional materials Electronic books.
Online Access:	Connect to the full text of this electronic book

Table of Contents:

Front cover
Half Title
Title
Copyright
Contents
Contributors
Chapter 1 Scalable synthesis of 2D materials
1.1 Introduction
1.2 Large-area graphene synthesis
1.2.1 Top-down: exfoliation and wafer-scale deposition
1.2.2 Bottom-up synthesis
1.3 Large-area transition metal dichalcogenide synthesis
1.3.1 Film conversion
1.3.2 Vapor-phase deposition methods
1.4 Large-area hexagonal boron nitride synthesis
1.4.1 Chemical vapor deposition
1.4.2 Molecular beam epitaxy
Conclusion
Acknowledgement
References
Chapter 2 Synthesis of 2D heterostructures
2.1 Introduction
2.2 Direct synthesis methods for 2D heterostructures
2.2.1 CVD methods and the effect of different precursors
2.3 Synthesis of multijunction heterostructures
2.3.1 Using the CVD Process
2.3.2 MOCVD process
2.3.3 Molecular Beam Epitaxy
2.4 Vertical heterostructure
2.4.1 Graphene and hBN
2.4.2 Graphene with TMDs
2.4.3 TMD/TMD heterostructures
2.4.4 Janus vertical and lateral heterostructure
2.5 Phase engineering in lateral heterostructures
2.5.1 Phase-selective synthesis
2.5.2 Phase transition
Conclusion
References
Chapter 3 Characterization of 2D transition metal dichalcogenides
3.1 Introduction
3.2 Raman spectroscopy of 2D materials
3.3 Raman scattering in TMDs
3.3.1 Identifying the number of layers
3.3.2 Identifying defects and doping
3.3.3 Identifying stacking order in TMDs
3.3.4 Measuring interlayer coupling in 2D van der Waals heterostructures (vdWHs)
3.3.5 Identifying TMD-based alloys
3.3.6 Identifying phase transition
3.3.7 Identifying the strain
3.4 Photoluminescence spectroscopy
3.5 PL in 2D TMDs
3.5.1 Identifying the number of layers
3.5.2 Identifying defects
3.5.3 Identifying doping
3.5.4 Identifying strain.
3.5.5 Effect of temperature
3.5.6 Effect of substrate
3.6 Atomic force microscopy and Kelvin probe force microscopy
3.6.1 Working principle
3.6.2 Different modes of AFM
3.6.3 Role of AFM and its electrical modes in probing 2D materials and their heterojunctions
3.7 Transmission electron microscope
3.7.1 Identifying the phase transition of 2D materials
3.7.2 Identifying defects
3.7.3 Identifying structural changes
3.8 X-ray photoelectron spectroscopy
3.8.1 Principle and elemental analysis
3.8.2 Identifying phases of TMDs
3.8.3 Effect of doping
3.9 Conclusion
References
Further reading
Chapter 4 2D heterostructures for advanced logic and memory devices
4.1 Background
4.1.1 Overview of 2D materials
4.1.2 2D van der Waals materials for transistors
4.1.3 Top gate and bottom gate FETs
4.1.4 Short-channel effects
4.1.5 Heterointegration
4.2 Tunable junction diodes and tunneling transistors
4.2.1 2D homojunctions
4.2.2 2D heterojunctions
4.2.3 2D material-based tunneling devices
4.2.4 Transistor scaling and low-power devices
4.3 Transistor memories and memristive devices
4.3.1 Floating gate memories
4.3.2 Ferroelectric memory devices
4.3.3 Memristive devices
4.3.4 Resistive switching mechanism in memristive devices
4.3.5 Lateral and vertical memristive devices from 2D materials
4.3.6 Memristive devices from 2D-MoS2
4.3.7 Memristive devices based on insulating hBN
4.4 Conclusions and outlook
References
Chapter 5 2D materials for flexible electronics
5.1 Introduction
5.2 Fabrication techniques
5.2.1 Mechanical exfoliation
5.2.2 Chemical exfoliation
5.2.3 CVD synthesis
5.2.4 Growth of novel heterostructures
5.2.5 Patterned growth
5.2.6 Direct growth on polymeric supporting substrates
5.2.7 Transfer method.
5.3 Flexible devices for various applications
5.3.1 Flexible transistors
5.3.2 Flexible sensors
5.3.3 Flexible energy storage devices: batteries and supercapacitors
5.4 Conclusions and future outlook
References
Chapter 6 2D materials for optoelectronics
6.1 Introduction
6.2 Background and overview
6.2.1 Device architectures and operating mechanisms
6.2.2 Measurements and benchmarking
6.3 Devices and applications
6.3.1 Photodetectors
6.3.2 Photovoltaics
6.3.3 Light emission
6.3.4 Flexible devices
6.3.5 Photonic devices
6.4 New application horizons
6.4.1 Tunable and reconfigurable devices
6.4.2 Optical memories
6.4.3 Straintronics
6.4.4 Superlattices
6.4.5 Neuromorphic applications
6.5 Conclusions
6.5.1 Gaps and challenges
6.5.2 Outlook
References
Chapter 7 2D materials for neuromorphic devices
7.1 Introduction
7.2 2D synapses: two-terminal memristor
7.2.1 Metal ion migration
7.2.2 Vacancy migration
7.2.3 Phase change mechanism
7.3 Two-dimensional synapses: three-terminal transistor
7.3.1 Charge trapping/detrapping
7.3.2 Ionic gating for synaptic devices
7.3.3 Tunneling effect
7.3.4 Multigate synergistic effect
7.3.5 Anisotropy
7.4 2D Materials vdW heterostructures
7.5 Conclusions and outlook
References
Index
Back cover.