rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: Ferroelectricity in doped hafnium oxide
    sub title: materials properties and devices
  name:
    name part: Schroeder, Uwe
    role:
      role term: editor
  name:
    name part: Hwang, Cheol Seong
    role:
      role term: editor.
  name:
    name part: Funakubo, Hiroshi
    role:
      role term: editor.
  name:
    name part: ScienceDirect (Online service)
  type of resource: text
  genre: bibliography
  genre: Electronic books.
  origin info:
    place:
      place term: enk
    date issued: 2019
    edition: First edition.
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: remote
    extent: 1 online resource : illustrations
  abstract: Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized.
  note: edited by Uwe Schroeder, Cheol Seong Hwang, Hiroshi Funakubo.
  note: Includes index.
  note: Includes bibliographical references and index.
  subject:
    topic: Metal oxide semiconductors
  subject:
    topic: Hafnium oxide
  subject:
    topic: Hafnium oxide
    topic: Electric properties
  subject:
    topic: Ferroelectricity
  subject:
    topic: MOS (Électronique)
  subject:
    topic: Ferroélectricité
  subject:
    topic: TECHNOLOGY & ENGINEERING
    topic: Mechanical
  subject:
    topic: Ferroelectricity
  subject:
    topic: Hafnium oxide
  subject:
    topic: Metal oxide semiconductors
  classification: TK7871.99.M44
  classification: 621.39732
  related item:
    title info:
      title: FERROELECTRICITY IN DOPED HAFNIUM OXIDE
    origin info:
      publisher: [Place of publication not identified], WOODHEAD, 2019
    identifier: (OCoLC)1051137546
  related item:
    title info:
      title: Woodhead Publishing series in electronic and optical materials
  identifier: 9780081024317
  identifier: 0081024312
  identifier: 0081024304
  identifier: 9780081024300
  identifier: 2019393969
  identifier: 9780081024317 Ingram Content Group
  identifier: http://proxy.library.tamu.edu/login
  record info:
    record content source: N$T
    record creation date: 190328
    record change date: 20260327162709.1
    record identifier: in00005764664
    language of cataloging:
      language term: eng