http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
Advances in imaging and electron physics
Advances in Imaging and Electron Physics, Volume 209, merges two long-running serials, Advances in Electronics and Electron Physics and Advances in Optical and Electron Microscopy. The series features extended articles on the physics of electron devices (especially semiconductor devices), particle optics at high and low energies, microlithography, image science, digital image processing, electromagnetic wave propagation, electron microscopy and the computing methods used in all these domains.
3.3 Simulation of the ternary alloys -- 3.3.1 Super-cell approach -- 3.3.2 Band gap -- 3.3.3 Plasmon energy -- 3.3.4 CDF zero-cut energy -- 3.4 Conclusions -- References -- 4 AlN/GaN and InAlN/GaN DBRs -- 4.1 Introduction -- 4.2 System I: AlN/GaN DBR -- 4.2.1 Sample details and previous characterization -- 4.2.2 Characterization through plasmon peak position -- Plasmon pro ling -- Composition determination from Vegard's law -- HAADF simulations -- 4.2.3 Anomalous segregation regions -- 4.3 System II: InAlN/GaN DBR -- 4.3.1 Sample details and previous characterization -- 4.3.2 Low-loss EELS data treatment -- 4.3.3 Composition and bowing parameter from Vegard's law -- 4.3.4 Optoelectronic and structural properties -- Kramers-Kronig analysis -- Band gap onset energy -- Effective electron number -- Cole-Cole plots -- 4.3.5 Assessing the impact of retardation losses -- 4.4 Conclusions -- References -- 5 Multiple InGaN QW heterostructure -- 5.1 Introduction -- 5.1.1 Structure growth and previous experiments -- 5.2 High resolution HAADF image analysis -- 5.3 Band gap and plasmon analysis -- 5.3.1 Low-loss EELS in nanometer-sized structures -- 5.3.2 Band gap energy -- 5.3.3 Plasmon analysis -- 5.4 KKA and electronic properties -- 5.4.1 Zero-cut energy -- 5.4.2 Electron effective mass -- 5.4.3 Ga 3d intensity -- 5.5 Conclusions -- References -- 6 Er-doped Si-nc/SiO2 multilayer -- 6.1 Introduction -- 6.1.1 Sample details and preliminary examination -- 6.2 HAADF and relative thickness analysis -- 6.3 Measuring the Si-ncs plasmon energy -- 6.3.1 Double plasmon t -- 6.3.2 Discussion -- 6.4 Conclusions -- References -- 7 Si-NCs embedded in dielectric matrices -- 7.1 Introduction -- 7.1.1 Sample details and preliminary examinations -- 7.2 Phase identi cation and MVA analysis -- 7.2.1 Analytical methodology -- Identi cation and segmentation of data regions.
MVA factorization -- 7.2.2 System I: silicon oxide barriers -- 7.2.3 System II: silicon carbide barriers -- 7.2.4 System III: silicon nitride barriers -- 7.2.5 Discussion and remarks -- 7.3 Optoelectronic properties of the Si-NCs -- 7.3.1 KKA in the Si-NCs and dielectric regions -- 7.3.2 Band gap measurements -- 7.3.3 Electron effective mass -- 7.4 Conclusions -- References -- 8 EELS conclusions -- 8.1 Simulation of group-III ternary compounds -- 8.2 Group-III ternary compound-based structures -- 8.3 Silicon-based structures -- 9 High-Tc superconductors and magnetic electron lenses -- 0 Introduction -- 1 Superconductors -- 1.1 General properties -- 1.2 The London theory -- 1.3 The Ginzburg-Landau theory -- 1.4 Microscopic theory -- 1.5 Magnetic ux structures -- 2 The use of classical superconductors in electron microscopy -- 2.1 Early work -- 2.2 Solenoid lenses -- 2.3 Trapped- ux lenses -- 2.4 Diamagnetic shielding lenses -- 2.5 Shrouded coils and pole piece lenses -- 2.6 Microscopes equipped with superconducting lenses -- 2.7 Design trends in superconducting lenses for electron microscopes -- 3 High-temperature superconductivity -- 3.1 High-temperature superconducting materials -- General structure -- YBa2Cu3O7-x -- 3.2 High-temperature superconductor properties -- Layered structure and anisotropy -- Substitution of elements -- Critical eld and critical current density -- Comparison of critical current density in bulky, thin lm, and multilayered superconductors -- Magnetic shielding -- 3.3 Possible mechanisms for electron pairing in high-Tc superconductors -- 3.4 Device applications -- 4 Thin lm fabrication -- 4.1 Introduction -- 4.2 Sputtering -- 4.3 Laser ablation -- 4.4 Evaporation -- Fabrication equipment -- Fabrication procedure -- Thin lm analysis -- 4.5 Other techniques -- 5 Experiments with a thin lm coil -- 5.1 Patterning.
5.2 Measurements -- Superconducting properties -- Field distribution -- 5.3 Technical feasibility -- 6 Thin helical lenses and thin lm lens elements -- 6.1 Introduction to thin helical lenses -- Focal properties -- Spherical aberration -- 6.2 Introduction to thin lm lens elements -- The lens element concept -- Various types of lens elements -- 6.3 The magnetic eld of a lens element -- The magnetic eld using the Biot-Savart law -- Uni ed representation for the magnetic eld of a one-turn spiral using a multipole expansion -- The eld of a lens element using a multipole expansion -- 7 Design of a thin lm stack pattern -- 7.1 Capacitive alignment -- Basic principles -- A differential capacitive position sensor -- 7.2 Geometry of the stack element -- Introduction -- Helical pattern -- Capacitive electrodes -- Connection between adjacent layers -- 7.3 Optical properties -- Introduction -- Field distribution -- First-order properties -- Spherical and chromatic aberration -- Parasitic aberrations -- 8 Experimental work on a prototype lens element -- 8.1 Fabrication of the lens element -- 8.2 The capacitive alignment procedure in practice -- 8.3 The prototype lens element using YBa2Cu3O7-x thin lms -- 9 Conclusions and future perspectives: The present state of high-Tc superconductors in particle optics -- 9.1 Potential applications -- Nomenclature -- List of symbols -- Abbreviations -- Acknowledgments -- References -- A Sample growth, preparation procedures, and instrumentation -- Sample growth -- Sample preparation -- Instrumentation -- Index -- Back Cover.
edited by Peter W. Hawkes and Martin Hÿtch.
Includes bibliographical references and index.