http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
III-Nitride Semiconductor Optoelectronics
1 online resource (xiv, 474 pages : illustrations
Front Cover; III-Nitride Semiconductor Optoelectronics; Copyright; Contents; Contributors; Preface; Part I: AlGaN UV Optoelectronics; Chapter One: Materials Challenges of AlGaN-Based UV Optoelectronic Devices; 1. Introduction; 2. Doping Challenges of AlGaN Alloys; 2.1. P-Type Doping; 2.1.1. Optimized Growth Conditions for p-Type Doping of AlGaN; 2.1.2. Polarization Engineering Approaches to p-Type Doping; 2.1.2.1. Mg-Doped Superlattices; 2.1.2.2. Distributed Polarization Doping; 2.1.2.3. Tunnel Junctions; 2.2. n-Type doping; 3. Substrates for UV Optoelectronics; 3.1. Introduction
3.2. Strain Management and Reduction of Extended Defects3.2.1. Impact of Extended Defects on Material and Device Properties; 3.2.2. Approaches to Strain Management and Defect Reduction; 3.3. Electrically Conductive Substrates and Alternative Approaches for Vertical-Injection-Geometry Devices; 3.3.1. n-Type GaN Substrates; 3.3.2. n-Type SiC Substrates; 3.3.3. Substrate Removal; 4. Summary and Outlook; Acknowledgments; References; Chapter Two: Development of Deep UV LEDs and Current Problems in Material and Device Technology; 1. Introduction; 2. Epitaxial Growth of AlN and AlGaN Alloys
2.1. High-Temperature MOCVD Growth of AlN on Sapphire2.2. MOCVD Growth of AlGaN Alloys; 3. Optical Properties of AlGaN; 3.1. Carrier Density and PL Decay Kinetics; 3.2. PL Efficiency and Lifetime; 3.3. Spectral Dependence of PL and Carrier Decay; 4. UV LED Device Design and Performance; 4.1. Efficiency of UV LED Devices; 4.2. UV LED Chip Design; 4.3. Improvements in Light Extraction from UV LED Devices; 5. Conclusions; Acknowledgments; References; Chapter Three: Growth of High-Quality AlN on Sapphire and Development of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes; 1. Introduction
2. Research Background of DUV LEDs3. Growth of High-Quality AlN on Sapphire Substrate; 4. Increase in IQE; 5. 222-351nm AlGaN and InAlGaN DUV LEDs; 6. Increase in EIE by MQB; 7. Future LED Design for High LEE; 8. Summary; References; Chapter Four: III-N Wide Bandgap Deep-Ultraviolet Lasers and Photodetectors; 1. Introduction; 2. MOCVD Growth of III-N DUV Materials and Heterostructures; 2.1. Substrate Selection Issues; 2.2. Growth of High-Quality AlN on Sapphire Templates; 2.3. Strain Effects; 2.4. Doping Issues; 3. III-N Device Design and Simulation
3.1. Simulation of Basic Materials Properties3.2. Comparison of Simulation Techniques; 4. Processing of III-N DUV Emitters and Photodetectors; 4.1. Ohmic Contacts; 4.1.1. n-Type Contacts; 4.1.2. p-Type Contacts; 4.2. Etching of III-N Materials; 4.3. Passivation of III-N Devices; 5. Performance of III-N DUV Lasers and Photodetectors; 5.1. Overview of DUV Lasers; 5.2. Optically Pumped DUV Lasers on Sapphire; 5.3. Fabry-Perot Injection Laser Limits; 5.4. III-N UVVCSEL Issues and Distributed Bragg Reflector Mirrors; 6. III-N DUV Photodetectors; 6.1. DUVPIN Photodiodes
edited by Zetian Mi and Chennupati Jagadish.
Includes bibliographical references and index.