rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: Advances in photovoltaics
    part number: part 4
  name:
    name part: Willeke, G.
    name part: 1954-
  name:
    name part: Weber, Eicke R.
  name:
    name part: ScienceDirect (Online service)
  type of resource: text
  genre: bibliography
  genre: Electronic books.
  origin info:
    place:
      place term: ne
    date issued: 2015
    edition: First edition.
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: remote
    extent: 1 online resource (x, 181 pages) : illustrations
  abstract: Advances in Photovoltaics: Part Four provides valuable information on the challenges faced during the transformation of our energy supply system to more efficient, renewable energies. The volume discusses the topic from a global perspective, presenting the latest information on photovoltaics, a cornerstone technology. It covers all aspects of this important semiconductor technology, reflecting on the tremendous and dynamic advances that have been made on this topic since 1975, when the first book on solar cells-written by Harold J. Hovel of IBM-was published as volume 11 in the now famous series on Semiconductors and Semimetals. Readers will gain a behind the scenes look at the continuous and rapid scientific development that leads to the necessary price and cost reductions in global industrial mass-production.
  table of contents: Front Cover; Advances in Photovoltaics: Part 4; Copyright; Contents; Contributors; Preface; Chapter One: Silicon Crystallization Technologies; 1. Silicon Feedstock; 1.1. Polysilicon: The Base Material for over 90% of All Solar Cells; 1.2. The Chemical Path; 1.3. Fluidized Bed Reactor; 1.4. The Metallurgical Path: UMG-Si; 1.5. Different Poly for Different Crystallization Techniques; 1.5.1. Mono Growth, Single Batch Mode; 1.5.2. Feeding and Multipulling; 1.5.3. Standard Multicrystalline Casting; 1.5.4. Float Zone; 2. Fundamental Parameters for Silicon Crystallization.
  table of contents: 2.1. Material Properties, Material Utilization, and Chemical Reactivity2.2. Numerical Simulation; 3. Crystallization Technologies; 3.1. Pulling from the Melt: The Cz Technique; 3.1.1. Standard Cz Growth; 3.1.1.1. Process Sequence; 3.1.1.2. The Main Cost Drivers; 3.1.2. Actual Trends and Recent Developments; 3.1.2.1. Magnetic Cz; 3.1.2.2. Active Cooling; 3.1.2.3. Multipulling, Feeding, and Continuous Growth; 3.2. Directional Solidification: Growth of Multicrystalline Silicon; 3.2.1. Standard Growth Process; 3.2.1.1. The Hardware; 3.2.1.2. Growth Process; 3.2.1.3. Crucible Coating.
  table of contents: 3.2.2. Actual Trends3.2.2.1. Scaling; 3.2.2.2. Mono-Like Growth; 3.2.2.3. High-Performance Multi; 3.3. FZ Growth; 3.3.1. State of the Art; 3.3.1.1. Diameter Limitations; 3.3.1.2. Feedstock; 4. Summary and Final Remarks; References; Chapter Two: Wafering of Silicon; 1. Introduction; 2. Multiwire Sawing Technology; 2.1. Slurry-Based Sawing; 2.2. Fixed Abrasive Sawing; 2.3. Experimental Sawing Results; 2.3.1. Slurry-Based Sawing; 2.3.1.1. Force in Ingot Feed Direction; 2.3.1.2. Friction Forces; 2.3.1.3. Dependence on Slurry Properties; 2.3.1.4. Wire Tension.
  table of contents: 2.3.1.5. Wafer Thickness, Wire Diameter, and Particle Size Distribution2.3.1.6. Saw Marks; 2.3.2. Fixed Abrasive Sawing; 2.4. Determination of Wafer Properties; 2.4.1. Surface Properties; 2.4.1.1. Thickness, TTV, and Roughness; 2.4.1.2. Subsurface Damage; 2.4.2. Single Indentation Tests; 2.4.2.1. Loose Abrasive Sawing; 2.4.2.2. Fixed Abrasive Sawing; 2.4.3. Fracture Behavior; 2.5. Electronic Grade Silicon; 3. Basic Sawing Mechanisms; 3.1. Slurry-Based Sawing; 3.1.1. Material Removal Rate; 3.1.2. Elastohydrodynamic Behavior of Slurry and Wire; 3.1.3. Numerical Simulation of the Sawing Process.
  table of contents: 3.2. Damage of the Wafer Surface3.2.1. Slurry Flow Instability and the Origin of Saw Marks; 3.2.2. Roughness and Subsurface Damage; 4. Alternative Wafering Technologies; 4.1. Cleavage Technologies; 4.2. Layer Transfer Technologies; References; Chapter Three: Reliability Issues of CIGS-Based Thin Film Solar Cells; 1. Reliability; 2. Metastabilities; 2.1. Conclusions on Metastabilities; 3. Partial Shading and Hotspots; 3.1. Conclusions on Partial Shading; 4. Potential-Induced Degradation; 4.1. Conclusions on PID; 5. Back Contact; Conclusions on Back Contact; References; Index.
  note: edited by Gerhard P. Willeke, Eicke R. Weber.
  note: Includes bibliographical references and index.
  subject:
    topic: Photovoltaic power generation
  subject:
    topic: Solar cells
  subject:
    topic: Conversion photovoltaïque
  subject:
    topic: Cellules solaires
  subject:
    topic: solar cells
  subject:
    topic: TECHNOLOGY & ENGINEERING
    topic: Mechanical
  subject:
    topic: Photovoltaic power generation
  classification: TK2960 .A375 v.4eb
  classification: 621.38152
  related item:
    title info:
      title: Advances in photovoltaics. part 4
    origin info:
      edition: First edition
    identifier: (OCoLC)919400406
  related item:
    title info:
      title: Semiconductors and semimetals ; v. 92
  identifier: 9780128010686
  identifier: 0128010681
  identifier: 9780128010211
  identifier: 0128010215
  identifier: 9780123813435
  identifier: 0123813433
  identifier: http://proxy.library.tamu.edu/login
  record info:
    record content source: N$T
    record creation date: 150629
    record change date: 20260326213526.5
    record identifier: in00005759237
    language of cataloging:
      language term: eng