GaAs microelectronics /
| Corporate Author: | |
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| Other Authors: | , |
| Format: | eBook |
| Language: | English |
| Published: |
Orlando, Fla. :
Academic Press,
1985.
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| Series: | VLSI electronics ;
v. 11. |
| Subjects: | |
| Online Access: | Connect to the full text of this electronic book |
Table of Contents:
- Front Cover; GaAs Microelectronics; Copyright Page; Table of Contents; List of Contributors; Preface; Chapter 1. GaAs Technology Perspective; I. INTRODUCTION; II. HISTORY OF GaAs TECHNOLOGY DEVELOPMENT; III. PROPERTIES OF GaAs AND RELATED lll-V COMPOUNDS; IV. DEVICE STRUCTURES FOR INTEGRATED CIRCUITS; V. NEW MATERIALS AND DEVICES; VI. SUMMARY; ACKNOWLEDGMENTS; REFERENCES; Chapter 2. GaAs Material Preparation and Characterization; I. INTRODUCTION; II. GROWTH OF GaAs SINGLE CRYSTALS; III. DIRECT ION IMPLANTATION; IV. SUBSTRATE AND ACTIVE LAYER CHARACTERIZATION; REFERENCES.
- Chapter 3. GaAs Monolithic MicrowaveIntegrated CircuitsI. GaAs MMIC OVERVIEW; II. FUNDAMENTALS OF GaAs MICROWAVE DEVICETECHNOLOGY; III. GaAs MMIC DESIGN PRINCIPLES; IV. GaAs MMIC PROCESSING TECHNIQUES; V. EXAMPLES OF MMIC TECHNOLOGY; VI. APPLICATIONS OF GaAs MMICS; VII. ISSUES AND ASSESSMENT; REFERENCES; Chapter 4. The Future Impact of GaAs DigitalIntegrated Circuits; I. INTRODUCTION; II. HIGH-SPEED GaAs DEVICES AND CIRCUITS; III. LSI LIMITATIONS OF LOGIC GATES; IV. DESIGN-RULE EFFECTS ON SPEED PERFORMANCE; V. GaAs DIGITAL IC FABRICATION TECHNOLOGY.
- VI. HIGH-SPEED DIGITAL IC TECHNOLOGY COMPARISONACKNOWLEDGMENT; REFERENCES; Chapter 5. GaAs Bipolar Digital Integrated Circuits; I. GaAs BIPOLAR DEVELOPMENT: A HISTORICALPERSPECTIVE; II. GaAs/AIGaAs EPITAXIAL MATERIALS PREPARATION; III. GaAs HETEROJUNCTION BIPOLAR TRANSISTORS; IV. HETEROJUNCTION BIPOLAR GATE ARRAY TECHNOLOGY; V. CONCLUSIONS; ACKNOWLEDGMENTS; REFERENCES; Chapter 6. The Selectively Doped Heterostructure Transistor:Materials, Devices, and Circuits; I. INTRODUCTION; II. MATERIAL PROPERTIES OF SDHT STRUCTURES; III. DISCRETE DEVICES; IV. SDHT CIRCUIT IMPLEMENTATIONS; V. CONCLUSIONS.
- v. ELECTRICAL PROBLEMS CREATED IN LCCCs AND PWB STRUCTURES BY INDUCTANCEIN THE POWER AND GROUND PLANESREFERENCES; Chapter 9. GaAs VLSI Technologyfor High-Speed Computers; I. INTRODUCTION; II. GaAs DEVICES FOR HIGH-PERFORMANCE VLSI; III. SELF-ALIGNED GaAs MESFET TECHNOLOGY FOR VLSI; IV. HEMT TECHNOLOGY FOR VLSI; V. APPLICATION TO HIGH-SPEED COMPUTERS; VI. SUMMARY; ACKNOWLEDGMENTS; REFERENCES; Chapter 10. Military Applicationsof GaAs Integrated Circuits; I. INTRODUCTION; II. FUNCTIONAL REPLICATION; III. MICROWAVE ANALOG APPLICATIONS; IV. MICROWAVE DIGITAL APPLICATIONS; VI. NOVEL APPLICATIONS.