http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
advances in materials and device research
Applied Solid State Science: Advances in Materials and Device Research, Volume 3 covers reviews that are directly related to the two devices which are the epitome of applied solid state science - the transistor and the laser. The book discusses the physics of multilayer-gate IGFET memories; the application of the transient charge technique in drift velocity; and trapping in semiconductors and in materials used in xerography, nuclear particle detectors, and space-charge-limited devices; as well as thin film transistors. The text describes the manipulation of laser beams in solids and discusses.
Front Cover; Applied Solid State Science Advances in Materials and Device Research; Copyright Page; Table of Contents; LIST OF CONTRIBUTORS; PREFACE; CONTENTS OF PREVIOUS VOLUMES; ARTICLES PLANNED FOR FUTURE VOLUMES; Chapter 1. Physics of Multilayer-Gate IGFET Memories; I. Introduction; II. IGFET Characteristics; III. Oxide Instabilities; IV. Current Transport through Insulators; V. The Memory Element; References; Chapter 2. Acousto-optics; I. Introduction; II. General Formulation; III. Strong Interaction; IV. Weak Interaction; V. Materials; VI. Applications; VII. Special Topics; Appendix A.
III. Frequency Dependence of the Electrooptic EffectIV. Electronic Electrooptic Effect (Nonlinear Optic Effect); V. Theory of the Electrooptic Effect; VI. Tabulation of Experimental Electrooptic Data; VII. Electrooptic Device Considerations; VIII. Conclusions; List of Symbols; Note Added in Proof; Reference; AUTHOR INDEX; SUBJECT INDEX.