rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: Sputtering materials for VLSI and thin film devices
  name:
    name part: Sarkar, Jaydeep
    role:
      role term: creator
    role:
      role term: author.
  name:
    name part: ScienceDirect (Online service)
  type of resource: text
  genre: Electronic books.
  origin info:
    place:
      place term: nyu
    date issued: 2011
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: remote
    extent: 1 online resource
  abstract: An important resource for the microelectronics and flat panel display industries, this book focuses on the development of sputtering targets for conductor, diffusion barrier, reflective, data storage and display applications. Sarkar reviews essential microelectronics industry topics, including: history and technology trends; chip making fundamentals; deposition and properties of thin films; and the role of sputtering target performance on overall production yield. Materials science fundamentals, types of metallic materials for conductors, diffusion barrier, data storage, and flat panel display applications are also discussed. The author illustrates his arguments with case studies and real-world examples of troubleshooting in an industrial setting. Unique coverage of sputtering target manufacturing methods in the light of semiconductor, displays, data storage and photovoltaic industry requirementsPractical information on technology trends, role of sputtering and major OEMs Discussion on properties of a wide variety of thin films which include silicides, conductors, diffusion barriers, transparent conducting oxides, magnetic films etc. Practical case-studies on target performance and troubleshooting. Essential technological information for students, engineers and scientists working in the semiconductor, display, data storage and photovoltaic industry.
  table of contents: Front Cover; Sputtering Materials for VLSI and Thin Film Devices; Copyright Page; Contents; Preface; 1 Sputtering Targets and Sputtered Films for the Microelectronic Industry; 1.1 Materials for microelectronics; 1.1.1 Introduction; 1.1.1.1 Electrical conductivity; 1.1.2 Conductors; 1.1.3 Semiconductors; 1.1.4 Insulators; 1.2 Scope of sputtering in microelectronics; 1.3 Sputtering materials for integrated circuits; 1.3.1 Introduction; 1.3.2 Silicide contact; 1.3.3 Conductor, liner, barrier and anti-reflection coating; 1.3.4 Assembly and packaging (back-end processes).
  table of contents: 1.3.4.1 Under bump metallization (UBM) and bond pad1.3.4.2 Through-silicon-via (TSV); 1.4 Sputtering materials for liquid crystal displays; 1.4.1 Introduction; 1.4.2 Active-matrix liquid crystal displays; 1.4.2.1 TFT array fabrication; 1.4.2.2 Cell assembly and Module assembly fabrication; 1.5 Sputtering materials for magnetic storage systems; 1.5.1 Introduction; 1.5.2 Thin film heads; 1.5.2.1 Inductive head; 1.5.2.2 Magnetoresistive head (MR heads); 1.5.2.3 Giant magnetoresistive head (GMR head); 1.5.3 Magnetic recording media; 1.6 Sputtering materials for optical storage media.
  table of contents: 1.7 Sputtering materials for photovoltaic devices1.7.1 Silicon wafer based solar cells; 1.7.2 Thin film solar cells; 1.8 Sputtering target industry; References; 2 Sputtering and Thin Film Deposition; 2.1 Introduction; 2.2 Physical vapor deposition; 2.3 Plasma and glow discharge; 2.4 Sputter deposition of thin films; 2.4.1 DC sputtering; 2.4.2 RF sputtering; 2.4.3 Reactive sputtering; 2.4.4 Magnetron sputtering; 2.4.4.1 Directional sputter deposition; 2.4.4.1.1 Long-throw sputter deposition; 2.4.4.1.2 Collimated sputter deposition; 2.4.4.2 Ionized physical vapor deposition (I-PVD).
  table of contents: 2.4.4.3 Hollow cathode magnetron2.4.4.4 Magnetrons for large area coating; 2.5 Thin film characteristics; References; 3 Performance of Sputtering Targets and Productivity; 3.1 Introduction; 3.2 Target chemistry; 3.3 Target metallurgy; 3.3.1 Grain size inhomogeneity and banding of grains; 3.3.2 Second-phase particles, inclusions and porosity; 3.3.3 Preferred orientation of grains; 3.3.4 Sputter surface roughness and overall finish; 3.3.5 Particle performance; 3.3.6 Target bond characteristics; 3.4 Ferromagnetic targets; 3.5 Target cleaning and packaging; 3.6 Target burn-in.
  table of contents: 3.7 Target utilizationReferences; 4 Sputtering Target Manufacturing; 4.1 Introduction; 4.2 Designing sputtering targets; 4.3 Target material fabrication; 4.3.1 Liquid metallurgy processing of targets; 4.3.1.1 Cast structure; 4.3.1.1.1 Phase diagram and microstructure; 4.3.1.1.2 Melting and casting practice; 4.3.1.2 Segregation and inclusion; 4.3.1.3 Pipe and porosity; 4.3.2 Powder metallurgy processing of targets; 4.3.2.1 Powder preparation; 4.3.2.2 Powder compaction; 4.3.2.3 Powder consolidation using sintering; 4.3.2.3.1 Solid phase sintering; 4.3.2.3.2 Liquid phase sintering.
  note: Jaydeep Sarkar.
  subject:
    topic: Microelectronics
    topic: Materials
  subject:
    topic: Flat panel displays
    topic: Materials
  subject:
    topic: Sputtering (Physics)
  subject:
    topic: Écrans plats
    topic: Matériaux
  subject:
    topic: Pulvérisation cathodique
  subject:
    topic: Microélectronique
    topic: Matériaux
  subject:
    topic: TECHNOLOGY & ENGINEERING
    topic: Mechanical
  subject:
    topic: Microelectronics
    topic: Materials
  subject:
    topic: Sputtering (Physics)
  classification: TK7874
  classification: 621.381
  related item:
    title info:
      title: Sputtering materials for VLSI and thin film devices
    name:
      name part: Sarkar, Jaydeep.
    identifier: (OCoLC)660539201
  identifier: 9780080947716
  identifier: 0080947719
  identifier: 9780815519874
  identifier: 0815519877
  identifier: 1306119952
  identifier: 9781306119955
  identifier: 9780815515937
  identifier: 0815515936
  identifier: 543246 MIL
  identifier: http://proxy.library.tamu.edu/login
  record info:
    record content source: OPELS
    record creation date: 131112
    record change date: 20260326195532.3
    record identifier: in00005753207
    language of cataloging:
      language term: eng