Methods of surface analysis /
Methods of Surface Analysis.
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| Other Authors: | |
| Format: | eBook |
| Language: | English |
| Language Notes: | English. |
| Published: |
Amsterdam ; New York :
Elsevier Scientific Pub. Co.,
1975.
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| Series: | Methods and phenomena, their applications in science and technology ;
v. 1. |
| Subjects: | |
| Online Access: | Connect to the full text of this electronic book |
Table of Contents:
- Front Cover; Methods of Surface Analysis; Copyright Page; Preface; Table of Contents; Introduction; Chapter 1. The aspects of sputtering in surface analysis methods; I. Introduction; II. The sputtering process; III. Specific particle bombardment aspects; IV. Outlook; References; Chapter 2. A comparison of the methods of surface analysis and their applications; I. Introduction; II. Classification of the methods for surface analysis by the incident particles used to produce an output of detectable particles; III. Electric and magnetic fields in; IV. Surface waves in; V. Conclusions; References.
- Chapter 3. Low-energy ion scattering spectrometryI. Introduction; II. Experimental equipment; III. Ion scattering principles; IV. Surface composition analysis; V. Surface structure; VI. Conclusions; Note added in proof; References; Chapter 4. Surface analysis by X-ray photoelectron spectroscopy; I. Introduction; II. Fundamentals; III. Chemical shifts; IV. Instrumentation; V. Some experimental variables; VI. Applications; VII. Summary; References; Chapter 5. Auger electron spectroscopy; I. Introduction; II. Fundamentals; III. Experimental methods; IV. Quantitative analysis; V. Applications.
- v. Chemical analysis of sputtered tantalum thin films by AES and SIMSVI. Quantitative analysis of sputtered tantalum films intentionally doped with nitrogen, carbon, and oxygen by AES and SIMS; VII. Analysis of P-doped Ta2O5 films by AES and SIMS; VIII. Analysis of platinum films containing phosphorus by AES and SIMS; IX. Analysis of alumina ceramic substrates by AES and SIMS; X. Chemical analysis of P-, As-, and B-doped silicon by SIMS and AES; XI. In-depth, bulk, and surface sensitivity comparison of AES and SIMS.
- XII. Anomalous ion yield effects produced at the surface in SIMS depth profiles .XIII. The use of high energy and low energy secondary ion discrimination in SIMS; XIV. Summary and conclusions; References; Chapter 8. The atom-probe field ion microscope; I. Introduction; II. Principles of atom-probes; III. Models of field ionization and field evaporation; IV. The TOF atom-probe; V.A 10 cm TOF atom-probe; VI. A magnetic sector atom-probe; VII. New phenomena observed with the atom-probe; VIII. Metallurgical applications; References.