http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
proceedings of the Seventh Trieste ICTP-IUPAP Semiconductor Symposium, International Centre for Theoretical Physics, Trieste, Italy, 8-12 June 1992
Trieste ICTP-IUPAP Semiconductor Symposium 1992)
Sole distributors for the USA and Canada, Elsevier Science Pub. Co.
1 online resource (xvii, 616 pages) : illustrations
Wide-band-gap semiconductors have been a research topic for many decades. However, it is only in recent years that the promise for technological applications came to be realized; simultaneously an upsurge of experimental and theoretical activity in the field has been witnessed. Semiconductors with wide band gaps exhibit unique electronic and optical properties. Their low intrinsic carrier concentrations and high breakdown voltage allow high-temperature and high-power applications (diamond, SiC etc.). The short wavelength of band-to-band transitions allows emission in the green, blue, or even UV region of the spectrum (ZnSe, GaN, etc.). In addition, many of these materials have favorable mechanical and thermal characteristics. These proceedings reflect the exciting progress made in this field. Successful p-type doping of ZnSe has recently led to the fabrication of blue-green injection lasers in ZnSe; applications of short-wavelength light-emitting devices range from color displays to optical storage. In SiC, advances in growth techniques for bulk as well as epitaxial material have made the commercial production of high-temperature and high-frequency devices possible. For GaN, refinement of growth procedures and new ways of obtaining doped material have resulted in blue-light-emitting diodes and opened the road to the development of laser diodes. Finally, while the quality of artificial diamond is not yet high enough for electronic applications, the promise it holds in terms of unique material properties is encouraging intense activity in the field. This volume contains contributions from recognized experts presently working on different material systems in the field. The papers cover the theoretical, experimental and application-oriented aspects of this exciting topic.
Front Cover; Copyright Page; Wide-band-gap Semiconductors; Conference photograph; Preface; Introduction; Table of Contents; Chapter 1. General reviews; Thin films and devices of diamond, silicon carbide and gallium nitride; Optical physics and laser devices in II-VI quantum confined heterostructures; Blue-green II-VI laser diodes; Chapter 2. Growth; Growth of GaN by ECR-assisted MBE; Ar ion laser-assisted metalorganic vapor phase epitaxy of ZnSe; Progress in epitaxial growth of SiC; CVD growth and characterization of single-crystalline 6H silicon carbide
Influence of temperature on the formation by reactive CVD of a silicon carbide buffer layer on siliconA model for the buffer layer formed on silicon during HFCVD diamond growth; Growth of diamond films from microwave plasma in CH4- CO2 mixtures; Early stages of nucleation and growth of diamond film by AES, SEM, UPS and optical reflectivity techniques: Surface composition; Crystal growth of III-N compounds under high nitrogen pressure; Substrate-quality, single-crystal ZnSe for homoepitaxy using seeded physical vapor transport; MOVPE-growth and physics of ZnSe-ZnTe superlattices
Chapter 3. DopingZnSe-based laser diodes and p-type doping of ZnSe; Doping limits in ZnSe; Self-compensation in nitrogen-doped ZnSe; Residual defect control when doping thin layers in diamond; Impurity incorporation and doping of diamond; Microscopic characterization of heavy-ion implanted diamond; Pseudopotential total-energy calculations of column-V acceptors in ZnSe; New acceptor-related compensation mechanisms in wide band gap semiconductors; Low-temperature MBE growth of p-type ZnSe using UV laser irradiation; Resonant photoluminescence measurements in As- and P-doped ZnTe epilayers
Gallium and nitrogen ion implantation in MOVPE-grown ZnSe/GaAsChapter 4. Defects and impurities; Theory of impurities in diamond; Defects, optical absorption and electron mobility in indium and gallium nitrides; Point defects in silicon carbide; Annealing behaviour of In impurities in SiC after ion implantation; Formation of macrodefects in SiC; Hydrogen in polycrystalline diamond; The 2.96 eV centre in diamond; Study of defects in wide band gap semiconductors by electron paramagnetic resonance; Site-selective study of picosecond relaxation processes of Ni2+ in polymorphic ZnS
Magneto-optics of Cu-related defects in polymorphic ZnSCenters of radiative and nonradiative recombination in isoelectronically doped ZnSe:Te crystals; Luminescence from structural defects in heteroepitaxial MOVPE-grown ZnTe; Intracenter transitions of transition metal impurities in II-VI semiconductors; PAD-investigations on MnS cluster formation within the diluted magnetic semiconductor ZnMnS; Chapter 5. Characterization; Electrical and optical characterization of SiC; Intrinsic and extrinsic absorption and luminescence in diamond
Includes bibliographical references and indexes.
Semi-conducteurs à large bande interdite
Trieste ICTP-IUPAP Semiconductor Symposium (7th : 1992).
Amsterdam : North-Holland ; New York : Sole distributors for the USA and Canada, Elsevier Science Pub. Co., 1993