rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: Advances in electronics and electron physics
    part number: Volume 41
  name:
    name part: Marton, L. (Ladislaus)
    name part: 1901-
  name:
    name part: ScienceDirect (Online service)
  type of resource: text
  genre: bibliography
  genre: Electronic books.
  origin info:
    place:
      place term: nyu
    place:
      place term: New York
    publisher: Academic Press
    date issued: 1976
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: remote
    extent: 1 online resource (x, 389 pages) : illustrations.
  abstract: ADVANCES ELECTRONC &ELECTRON PHYSICS V41.
  table of contents: Front Cover; Advances in Electronics and Electron Physics, Volume 41; Copyright Page; Contents; Contributors to Volume 41; Foreword; Chapter 1. Nonlinear Electron Acoustic Waves, Part II; I. Introduction; II. Natural Phenomena; III. Laboratory Experimentation; IV. Theories of the Electron Waves; V. Conclusion; References; Chapter 2. Atomic Photoelectron Spectroscopy, Part I; I. Introduction; II. Theoretical Description of the Photoionization Process; III. Experimental Techniques; References; Chapter 3. Emission of Polarized Electrons from Solids; I. Introduction; II. Techniques and Apparatus
  table of contents: III. Results of Spin-Polarized PhotoemissionIV. Results of Other Techniques; V. Conclusion; References; Chapter 4. Generation of Images by Means of Two-Dimensional, Spatial Electric Filters; I. Introduction; II. Image Generation by Linear Transformations; III. Focusing for Spherical Wavefronts; IV. Reduction of the Array Size; V. Implementation of Filters by Digital Circuits; VI. Beyond the Capabilities of Photography and Holography; VII. Experimental Equipment and Test Results; Appendix; References; Chapter 5. Nonvolatile Semiconductor Memories; I. Introduction
  table of contents: II. Some Nonvolatile Memory DevicesIII. Semiconductor Memory Devices; IV. Reprogrammable Read-Only Memory (RePROM) Devices; V. Injection and Conduction Mechanisms; VI. MIOS Devices; VII. Floating-Gate Devices; VIII. Discussion and Conclusions; Glossary of Symbols Used in Text; References; Chapter 6. High-Power Electronic Devices; I. Introduction; II. Semiconductor Devices; III. Thyristor Systems; IV. Development of Calculation Methods; V. Field of Application; VI. Conclusion; References; Author Index; Subject Index
  note: edited by L. Marton.
  note: Includes bibliographical references and indexes.
  note: English.
  subject:
    topic: Electronics
  subject:
    topic: Electrons
  subject:
    topic: Electronics
  subject:
    topic: Electrons
  subject:
    topic: Électronique
  subject:
    topic: Électrons
  subject:
    topic: TECHNOLOGY & ENGINEERING
    topic: Electronics
    topic: Microelectronics
  subject:
    topic: TECHNOLOGY & ENGINEERING
    topic: Electronics
    topic: Digital
  subject:
    topic: Electronics
  subject:
    topic: Electrons
  classification: TK7800 .A3741 1976eb
  classification: 621.381
  related item:
    title info:
      title: Advances in electronics and electron physics ; v. 41
  related item:
    title info:
      title: Advances in electronics and electron physics. Volume 41
    origin info:
      publisher: New York : Academic Press, 1976
    identifier: (DLC) 49007504
  identifier: 9780080577067
  identifier: 0080577067
  identifier: 0120145413
  identifier: 9780120145416
  identifier: 1281748293
  identifier: 9781281748294
  identifier: 9786611748296
  identifier: 6611748296
  identifier: 49007504
  identifier: http://proxy.library.tamu.edu/login
  record info:
    record content source: E7B
    record creation date: 750720
    record change date: 20260326180521.6
    record identifier: in00005744397
    language of cataloging:
      language term: eng