http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
1 online resource (xvi, 679 pages) : illustrations
This volume reviews the latest understanding of the behavior and roles of oxygen in silicon, which will carry the field into the ULSI era from the experimental and theoretical points of view. The fourteen chapters, written by recognized authorities representing industrial and academic institutions, cover thoroughly the oxygen related phenomena from the crystal growth to device fabrication processes, as well as indispensable diagnostic techniques for oxygen. Key Features* Comprehensive study of the behavior of oxygen in silicon* Discusses silicon crystals f.
Front Cover; Oxygen in Silicon: Semiconductors and Semimetals; Copyright Page; Contents; List of Contributors; Preface; Chapter 1. Introduction to Oxygen in Silicon; Chapter 2. The Incorporation of Oxygen into Silicon Crystals; Chapter 3. Characterization Techniques for Oxygen in Silicon; Chapter 4. Oxygen Concentration Measurement; Chapter 5. Intrinsic Point Defects in Silicon; Chapter 6. Some Atomic Configurations of Oxygen; Chapter 7. Electrical Properties of Oxygen in Silicon; Chapter 8. Diffusion of Oxygen in Silicon.
Master and use copy. Digital master created according to Benchmark for Faithful Digital Reproductions of Monographs and Serials, Version 1. Digital Library Federation, December 2002. http://purl.oclc.org/DLF/benchrepro0212 MiAaHDL
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Includes bibliographical references and index.