rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: Etching of crystals
    sub title: theory, experiment, and application
  name:
    name part: Sangwal, Keshra.
    role:
      role term: creator
  name:
    name part: ScienceDirect (Online service)
  type of resource: text
  genre: bibliography
  genre: Electronic books.
  origin info:
    place:
      place term: ne
    place:
      place term: Amsterdam
    place:
      place term: New York
    place:
      place term: New York, NY, USA
    publisher: North-Holland
    publisher: Sole distributors for the USA and Canada, Elsevier Science Pub. Co.
    date issued: 1987
    issuance: monographic
  language:
    language term: eng
  physical description:
    reformatting quality: access
    form: remote
    extent: 1 online resource (xx, 497 pages) : illustrations
  table of contents: Front Cover; Etching of Crystals: Theory, Experiment, and Application; Copyright Page; Dedication; Preface; Table of Contents; Chapter 1. Defects in crystals; 1.1. Nature of crystal surfaces; 1.2. Point defects and their clusters; 1.3. Dislocations; 1.4. Boundaries between regions of different orientations; 1.5. p-n homojunctions and double heterojunctions; 1.6. Growth striatums, sector boundaries and lineages; Chapter 2. Detection of defects; 2.1. Growth spirals; 2.2. Chemical etching; 2.3. Thermal etching; 2.4. Preferential oxidation; 2.5. Preferential dehydration and decomposition
  table of contents: 2.6. Ion-bombardment etching2.7. Enhanced nonradiative recombination techniques; 2.8. Decoration techniques; 2.9. Topographic techniques; 2.10. The photoelastic method; 2.11. Thin-film techniques; 2.12. Advantages and limitations of the different methods to study defects; Chapter 3. Growth and dissolution of crystals; 3.1. Conditions of the formation of growth nuclei; 3.2. Nucleation; 3.3. Kinetics of crystal growth; 3.4. Surface entropy factor; 3.5. The morphology of crystals; 3.6. Growth forms from the viewpoint of growth kinetics; 3.7. Effect of impurities on kinetics and growth form
  table of contents: 3.8. Ordered impurity-adsorption layers and growth morphodromes3.9. Growth controlled by mass and heat transfer; 3.10. Growth controlled by simultaneous mass transfer and surface reactions; 3.11. Reciprocity of growth and dissolution; 3.12. Surface roughening during diffusion-controlled dissolution; 3.13. Crystal-solution interfacial layer; 3.14. Anisotropy of the macroscopic dissolution rate; Chapter 4. Theories of dissolution and etch-pit formation; 4.1. The nature of pit sites; 4.2. Kinematic theories; 4.3. Thermodynamic theories; 4.4. Diffusion theories
  table of contents: 4.5. Topochemical adsorption theories4.6. The present-day situation; Chapter 5. Chemical aspects of the dissolution process; 5.1. Catalytic reactions; 5.2. Elementary steps involved in dissolution; 5.3. Types of reactions during dissolution; 5.4. Formation of oxide layers; 5.5. Dissolution of water-soluble crystals; 5.6. Dissolution of water-insoluble ionic crystals; 5.7. Dissolution of metals; 5.8. Dissolution of semiconductors; 5.9. Maxima in the curves of dissolution rate versus etchant composition; 5.10. Relation between etch rate and the pH of the solution
  table of contents: Chapter 6. Solubility of crystals and complexes in solution6.1. The structure of solvents and solutions; 6.2. Solvation and solubility; 6.3. Solvents for crystals and estimation of crystal solubility in solvents other than water; 6.4. Temperature dependence of the solubility; 6.5. The relationship between solubility, surface energy and hardness of crystals; 6.6. Complexes in solution and their structure; 6.7. Stability of complexes; 6.8. Size and charge of complexes; Chapter 7. The kinetics and the mechanism of dissolution: a survey of experimental results; 7.1. Alkali halide crystals
  note: Keshra Sangwal.
  note: Includes indexes.
  note: Master and use copy. Digital master created according to Benchmark for Faithful Digital Reproductions of Monographs and Serials, Version 1. Digital Library Federation, December 2002. http://purl.oclc.org/DLF/benchrepro0212 MiAaHDL
  note: digitized 2010 HathiTrust Digital Library committed to preserve pda MiAaHDL
  note: Includes bibliographical references (pages 440-462).
  note: English.
  subject:
    topic: Crystals
    topic: Etching
  subject:
    topic: Cristaux
    topic: Attaque chimique
  subject:
    topic: SCIENCE
    topic: Physics
    topic: Crystallography
  subject:
    topic: Crystals
    topic: Etching
  subject:
    topic: Kristall
  subject:
    topic: Ätzen
  classification: QD931 .S36 1987
  classification: 548/.8
  classification: 33.61
  classification: UQ 2800
  classification: 428.4
  related item:
    title info:
      title: Etching of crystals
    name:
      name part: Sangwal, Keshra.
    origin info:
      publisher: Amsterdam ; New York : North-Holland ; New York, NY, USA : Sole distributors for the USA and Canada, Elsevier Science Pub. Co., 1987
    identifier: (DLC) 86023625
    identifier: (OCoLC)14358957
  related item:
    identifier: (DLC) 86023625
    identifier: (OCoLC)14358957
  related item:
    title info:
      title: Defects in solids ; v. 15
  identifier: 0444870180
  identifier: 9780444870186
  identifier: 9780444599018
  identifier: 0444599010
  identifier: http://proxy.library.tamu.edu/login
  record info:
    record content source: OCLCE
    record creation date: 100324
    record change date: 20260326172724.8
    record identifier: in00005740729
    language of cataloging:
      language term: eng