Light emission in silicon : from physics to devices /
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The"Willardson and Beer"Series, as it is widely known, has succeeded in publishing num...
| Corporate Author: | |
|---|---|
| Other Authors: | |
| Format: | eBook |
| Language: | English |
| Published: |
San Diego :
Academic Press,
©1998.
|
| Series: | Semiconductors and semimetals ;
v. 49. |
| Subjects: | |
| Online Access: | Connect to the full text of this electronic book |
Table of Contents:
- Front Cover; Light Emission in Silicon: From Physics to Devices; Copyright Page; Contents; List of Contributors; Abstract; Preface; Chapter 1. Light Emission in Silicon; I. Introduction; II. The Optoelectronic Age; III. Physical Properties of Si; IV. Methods for Overcoming the Indirect Bandgap Limitations in Si; V. Prospects for Si Based Optoelectronic Devices; References; Chapter 2. Band Gaps and Light Emission in Si/SiGe Atomic Layer Structures; I. Introduction; II. Structural Properties; Ill. Bandgaps, Band Offsets, and Brillouin Zone Folding.
- IV. Photoluminescence, Electroluminescence, and Photocurrent MeasurementsV. Concluding Remarks; Acknowledgments; References; Chapter 3. Radiative Isoelectronic Impurities in Silicon and Silicon-Germanium Alloys and Superlattices; I. Introductory Concepts; II. Isoelectronic Bound Exciton Emission from c-Si; III. Isoelectronic Bound Exciton Emission in Be-Doped SiGe Alloys: A Case Study; IV. Device Considerations; V. Concluding Remarks; References; Chapter 4. Erbium in Silicon; I. Introduction; II. Er Doping of Si; III. Diffusivity and Solubility; IV. Light Emission; V. Electronic Structure.
- VI. Light Emitting Diode DesignVII. Summary; Acknowledgments; References; Chapter 5. Silicon and Germanium Nanoparticles; I. Introduction; II. Fabrication of Silicon (Si) and Germanium (Ge) Nanoparticles; III. Photoluminescence Mechanism; IV. Unique Optical Phenomena; V. Summary; Acknowledgments; References; Chapter 6. Porous Silicon: Photoluminescence and Electroluminescent Devices; I. Introduction; II. Properties of the PL Bands; III. Origin of the Intrinsic PL Bands; IV. Pure Quantum Confinement and Surface States: A Critical Discussion; V. Nonoptical Properties.
- VI. Electroluminescent DevicesVII. Conclusions and Outlook; Chapter 7. Theory of Radiative and Nonradiative Processes in Silicon Nanocrystallites; I. Introduction; II. Electronic Properties; III. Optical Transitions and Radiative Lifetime; IV. Exchange Splitting and Symmetry of the Crystallites; V. Atomic Relaxation, Stokes Shift, and Self-trapped Exciton; VI. Nonradiative Recombination; VII. Screening in Nanocrystallites and Coulomb Charging Effects; VIII. Conclusion; References; Chapter 8. Silicon Polymers and Nanocrystals; I. Introduction.
- II. Silicon Polymers in One, Two, and Three DimensionsIII. Passivated Silicon Nanocrystals; IV. Electron Transport in Porous Nanocrystal Materials; Acknowledgments; References; Index; Contents of Volumes in This Series.