Germanium silicon : physics and materials /
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing n...
| Corporate Author: | |
|---|---|
| Other Authors: | , |
| Format: | eBook |
| Language: | English |
| Language Notes: | English. |
| Published: |
San Diego :
Academic Press,
©1999.
|
| Series: | Semiconductors and semimetals ;
v. 56. |
| Subjects: | |
| Online Access: | Connect to the full text of this electronic book |
Table of Contents:
- Front Cover; Germanium Silicon: Physics and Materials; Copyright Page; Contents; List of Contributors; Chapter 1. Growth Techniques and Procedures; I. Introduction; II. Generic lssues; III. Common Growth Techniques; IV. Comparison of Growth Results; V. Nonplanar Growth; VI. Summary; Chapter 2. Fundamental Mechanisms of Film Growth; I. Introduction; II. Silicon; III. Heteroepitaxial Growth: Ge on Si; IV. SiGe Alloy Films; V. Summary; References; Chapter 3. Misfit Strain and Accommodation in SiGe Heterostructures; I. Origin of Strain in Heteroepitaxy; II. Accommodation of Strain.
- III. Review of Basic Dislocation TheoryIV. Excess Stress, Equilibrium Strain and Critical Thickness; V. Metastability and Misfit Dislocation Kinetics; VI. Misfit and Threading Dislocation Reduction Techniques; VII. Conclusions; References; Chapter 4. Fundamental Physics of Strained Layer GeSi: Quo Vadis?; I. Introduction; II. Perfect Superlattice Systems; III. Electronic Structure of Imperfect and Finite Systems; IV. Luminescence and Interface Localization; V. Microscopic Signature of GeSi Interfaces; VI. Microscopic Electronic Structure Effects in Optical Spectra; VII. Conclusion; References.
- Chapter 5. Optical PropertiesI. Introduction; II. Forms of Differential Spectroscopy Based on Reflection or Absorption of Light; III. Raman Scattering; IV. Photoluminescence; V. Concluding Remarks; References; Chapter 6. Electronic Properties and Deep Levels in Germanium-Silicon; I. Introduction; II. Deep Levels in GexSi1-x; III. Influence of Defects on Electrical Properties of GexSi1-x, Alloys; IV. Camer Transport Properties of GexSi1-x; V. Conclusions; References; Chapter 7. Optoelectronics in Silicon and Germanium Silicon; I. Introduction; II. Photodetectors; III. Light Emitters.
- IV. Guided-Wave DevicesV. Conclusions; References; Chapter 8. Si1-y, Cy, and Si1-x-yGexCy Alloy Layers; I. Introduction; II. General Remarks on the Material Combination of Si, Ge and C; III. Preparation of Si1-yCy and Si1-x-yGexCy Layers by Molecular Beam Epitaxy; IV. Structural Properties; V. Optical Properties; VI. Electrical Transport Properties; VII. Summary/Devices; References; Index; Contents of Volumes in This Series.