rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: Dilute nitride semiconductors
  name:
    name part: Henini, Mohamed.
    role:
      role term: creator
  name:
    name part: ScienceDirect (Online service)
  type of resource: text
  genre: bibliography
  genre: Electronic books.
  origin info:
    place:
      place term: ne
    place:
      place term: Amsterdam
    place:
      place term: London
    publisher: Elsevier
    date issued: 2005
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: remote
    extent: 1 online resource (xvii, 630 pages) : illustrations (some color)
  abstract: * This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field. * It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas * Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community. The high speed lasers operating at wavelength of 1.3 æm and 1.55 æm are very important light sources in optical communications since the optical fiber used as a transport media of light has dispersion and attenuation minima, respectively, at these wavelengths. These long wavelengths are exclusively made of InP-based material InGaAsP/InP. However, there are several problems with this material system. Therefore, there has been considerable effort for many years to fabricate long wavelength laser structures on other substrates, especially GaAs. The manufacturing costs of GaAs-based components are lower and the processing techniques are well developed. In 1996 a novel quaternary material GaInAsN was proposed which could avoid several problems with the existing technology of long wavelength lasers. In this book, several leaders in the field of dilute nitrides will cover the growth and processing, experimental characterization, theoretical understanding, and device design and fabrication of this recently developed class of semiconductor alloys. They will review their current status of research and development. Dilute Nitrides (III-N-V) Semiconductors: Physics and Technology organises the most current available data, providing a ready source of information on a wide range of topics, making this book essential reading for all post graduate students, researchers and practitioners in the fields of Semiconductors and Optoelectronics * This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers …
  table of contents: MBE growth and characterization of long wavelength dilute nitride III-V alloys -- Epitaxial growth of dilute nitrides by metal-organic vapour phase epitaxy -- The chemical beam epitaxy of dilute nitride alloy semiconductors -- MOMBE growth and characterization of III-V-N compounds and application to InAs quantum dots -- Recent progress in dilute nitride quantum dots -- Physics of isoelectronic dopants in GaAs -- Measurement of carrier localization degree, electron effective mass, and excition size in InxGa1-xAs1-yNy alloys -- Probing the "unusual" band structure of dilute Ga(AsN) quantum wells by magneto-tunnelling spectroscopy and other techniques -- Photo- and electro-reflectance of III-V-N compounds and low dimensional structures -- Band anticrossing and related electronic structure in III-N-V alloys -- A tight-binding based analysis of the band anti-crossing model and its application in Ga(In)NAs alloys -- electronic structure evolution of dilute III-V nitride alloys -- Theory of nitrogen-hydrogen complexes in N-containing III-V alloys -- Dislocation-free III-V-N alloy layers on Si substrates and their device applications -- GaNAsSb alloy and its potential for device applications -- A comparative look at 1.3 [micro]m InGaAsN-based VCSELs for fiber-optical communication systems -- Long-wavelength dilute nitride-antimonide lasers -- Application of dilute nitride materials to heterojunction bipolar transistors.
  note: M. Henini.
  note: Includes bibliographical references and index.
  subject:
    topic: Semiconductors
    topic: Materials
  subject:
    topic: Nitrides
  subject:
    topic: Semi-conducteurs
    topic: Matériaux
  subject:
    topic: Nitrures
  subject:
    topic: TECHNOLOGY & ENGINEERING
    topic: Electronics
    topic: Solid State
  subject:
    topic: TECHNOLOGY & ENGINEERING
    topic: Electronics
    topic: Semiconductors
  subject:
    topic: Nitrides
  subject:
    topic: Semiconductors
    topic: Materials
  subject:
    topic: semiconductor
  classification: TK7871.15.N57 H46 2005eb
  classification: 621.38152
  related item:
    title info:
      title: Dilute nitride semiconductors
    name:
      name part: Henini, Mohamed.
    origin info:
      publisher: Amsterdam ; London : Elsevier, 2005
    identifier: (OCoLC)56640617
  identifier: 9780080445021
  identifier: 0080445020
  identifier: 9780080455990
  identifier: 0080455999
  identifier: 1280628340
  identifier: 9781280628344
  identifier: 105488:105516 Elsevier Science & Technology
  identifier: http://proxy.library.tamu.edu/login
  record info:
    record content source: OPELS
    record creation date: 070806
    record change date: 20260326151223.1
    record identifier: in00005732388
    language of cataloging:
      language term: eng