http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
a new paradigm in condensed matter and device physics
1 online resource : illustrations (black and white)
This book provides a complete description of the science and applications of graphene, a revolutionary two-dimensional one-atom-thick material of exceedingly high electrical conductivity and tensile strength.
Machine generated contents note: 1. Introduction -- 1.1. Crystals one atom thick: a new paradigm -- 1.2. Roles of symmetry and topology -- 1.2.1. Linear bands, massless Dirac particles -- 1.2.2. Pseudo-spins from dual sublattices and helicity -- 1.3. Analogies to relativistic physics backed by experiment -- 1.4. Possibility of carbon ring electronics -- 1.5. Nobel Prize in Physics in 2010 to Andre K. Geim and Konstantin S. Novoselov -- 1.6. Perspective, scope and organization -- 2. Physics in two dimensions (2D) -- 2.1. Introduction -- 2.2. 2D electrons on liquid helium and in semiconductors -- 2.3. The quantum Hall effect, unique to 2D -- 2.3.1. Hall effect at low magnetic field -- 2.3.2. High field effects -- 2.3.3. von Klitzing's discovery of the quantized Hall effect -- 2.4. Formal theorems on 2D long-range order -- 2.4.1. Absolute vs. relative thermal motions in 2D -- 2.4.2. The Hohenberg -- Landau -- Mermin -- Peierls -- Wagner Theorem
3.2.4. Fullerene C60 -- 3.2.5. Graphane and Fluorographene -- 3.3. Crystals: diamond and graphite -- 3.3.1. Mined graphite -- 3.3.2. Synthetic Kish graphite -- 3.3.3. Synthetic HOPG: Highly Oriented Pyrolytic Graphite -- 4. Electron bands of graphene -- 4.1. Semimetal vs. conductor of relativistic electrons -- 4.2. Linear bands of Wallace and the anomalous neutral point -- 4.2.1. Pseudo-spin wavefunction -- 4.3. L. Pauling: graphene lattice with 1/3 double-bond character -- 4.4. McClure: diamagnetism and zero-energy Landau level -- 4.5. Fermi level manipulation by chemical doping -- 4.6. Bilayer graphene -- 5. Sources and forms of graphene -- 5.1. Graphene single-crystals, flakes and cloths -- 5.1.1. Micro-mechanically cleaved graphite -- 5.1.2. Chemically and liquid-exfoliated graphite flakes -- 5.2. Epitaxially and catalytically grown crystal layers -- 5.2.1. Epitaxial growth on SiC: Si face vs. C face -- 5.2.2. Catalytic growth on Ni or Cu, with transfer -- 5.2.3. Large area roll-to-roll production of graphene
5.2.4. Grain structure of CVD graphene films -- 5.2.5. Hybrid boron-carbon-nitrogen BCN films -- 5.2.6. Atomic layer deposition -- 5.3. Graphene nanoribbons -- 5.3.1. Zigzag and armchair terminations -- 5.3.2. Energy gap at small ribbon width, transistor dynamic range -- 5.3.3. Chemical synthesis of perfect armchair nanoribbons -- 6. Experimental probes of graphene -- 6.1. Transport, angle-resolved photoemission spectroscopy -- 6.2. Optical, Raman effect, thermal conductivity -- 6.3. Scanning tunneling spectroscopy and potentiometry -- 6.4. Capacitance spectroscopy -- 6.5. Inverse compressibility with scanning single electron transistor (SSET) -- 7. Mechanical and physical properties of graphene -- 7.1. Experimental aspects of 2D graphene crystals -- 7.1.1. Classical (extrinsic) origin of ripples and wrinkles in monolayer graphene -- 7.1.2. Stability of graphene in supported samples up to 30 inches -- 7.1.3. Phonon dispersion in graphene -- 7.1.4. Experimental evidence of nanoscale roughness -- 7.1.5. Electrical conductivity of graphene in experiment
7.2. Theoretical approaches to intrinsic corrugations -- 7.3. Impermeable even to helium -- 7.4. Nanoelectromechanical resonators -- 7.5. Metal-insulator Mott -- Anderson transition in ultrapure screened graphene -- 7.6. Absence of intrinsic ripples and minimum conductivity in graphene -- 8. Anomalous properties of graphene -- 8.1. Sublimation of graphite and melting of graphene -- 8.2. Electron and hole puddles, electrostatic doping and the minimum conductivity -- 8.3. Giant non-locality in transport -- 8.4. Anomalous integer and fractional quantum Hall effects -- 8.5. Absence of backscattering, carrier mobility -- 8.6. Proposed nematic phase transition in bilayer graphene -- 8.7. Klein tunneling, Dirac equation -- 8.8. Superconducting proximity effect, graphene Josephson junction -- 8.9. Quasi-Rydberg impurity states; Zitterbewegung -- 9. Applications of graphene -- 9.1. Transistor-like devices -- 9.1.1. High-frequency FET transistors -- 9.1.2. Vertically configured graphene tunneling FET devices -- 9.1.3. The graphene Barristor, a solid state triode device
9.2. Phototransistors, optical detectors and modulators -- 9.3. Wide area conductors, interconnects, solar cells, Li-ion batteries and hydrogen storage -- 9.3.1. Interconnects -- 9.3.2. Hydrogen storage, supercapacitors -- 9.4. Spintronic applications of graphene -- 9.5. Sensors of single molecules, electronic nose -- 9.6. Metrology, resistance standard -- 9.7. Memory elements -- 9.8. Prospects for graphene in new digital electronics beyond CMOS -- 9.8.1. Optimizing silicon FET switches -- 9.8.2. Potentially manufacturable graphene FET devices -- 9.8.3. Tunneling FET devices -- 9.8.4. Manufacturable graphene tunneling FET devices -- 10. Summary and assessment.
Includes bibliographical references and index.