http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
Advanced MOS devices and their circuit applications
An overview of DC/RF performance of nanosheet field effect transistor for future low power applications / Arun A V, Sajeesh M, Jobymol Jacob, J Ajayan -- Device design and analysis of 3D SCwRD cylindrical (Cyl) gate-all-around (GAA) tunnel FET using split-channel and spacer engineering / Ankur Beohar, Seema Tiwari, Kavita Khare, Santosh Kumar Vishvakarma -- Investigation of High-K dielectrics for single and multi-gate FETs / Sresta Valasa, Shubham Tayal, Laxman Raju Thoutam -- Measurement of back gate biasing for ultra low power subthreshold logic in FinFET device / Ajay Kumar Dadoria, Uday Panwar, Narendra Kumar Garg -- Compact analytical model for graphene field effect transistor : drift-diffusion approach / Abhishek Kumar Upadhyay, Siromani Balmukund Rahi -- Design of CNTFET-based ternary logic flip-flop and counter circuits using unary operators / Trapti Sharma -- Novel radiation hardened low power 12 transistors sram cell for aerospace application / Vancha Sharath Reddy, Arjun Singh Yadav, Soumya Sengupta -- Nanoscale CMOS static random access memory (SRAM) design : trends and challenges / Sunanda Ambulkar, Jeetendra Kumar Mishra -- Variants based Gate Modification (VGM) technique for reducing leakage power and short channel effect in DSM circuits / Uday Panwar, Ajay Kumar Dadoria -- A novel approach for high speed and low power by using nano-VLSI interconnects / Narendra Kumar Garg , Vivek Singh Kushwah, Ajay Kumar Dadoria.
edited by Ankur Beohar, Ribu Mathew, Abhishek Kumar Upadhyay and Santosh Kumar Vishvakarma.
Includes bibliographical references and index.
Metal oxide semiconductor field-effect transistors
Boca Raton : CRC Press, Taylor & Francis Group, 2024