rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: Advanced MOS devices and their circuit applications
  name:
    name part: Beohar, Ankur
    role:
      role term: editor.
  name:
    name part: Mathew, Ribu
    role:
      role term: editor.
  name:
    name part: Upadhyay, Abhishek Kumar
    role:
      role term: editor.
  name:
    name part: Vishvakarma, Santosh Kumar
    role:
      role term: editor.
  name:
    name part: EBSCOhost
  type of resource: text
  genre: bibliography
  genre: Electronic books.
  origin info:
    place:
      place term: flu
    date issued: 2024
    edition: First edition.
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: remote
    extent: 1 online resource.
  table of contents: An overview of DC/RF performance of nanosheet field effect transistor for future low power applications / Arun A V, Sajeesh M, Jobymol Jacob, J Ajayan -- Device design and analysis of 3D SCwRD cylindrical (Cyl) gate-all-around (GAA) tunnel FET using split-channel and spacer engineering / Ankur Beohar, Seema Tiwari, Kavita Khare, Santosh Kumar Vishvakarma -- Investigation of High-K dielectrics for single and multi-gate FETs / Sresta Valasa, Shubham Tayal, Laxman Raju Thoutam -- Measurement of back gate biasing for ultra low power subthreshold logic in FinFET device / Ajay Kumar Dadoria, Uday Panwar, Narendra Kumar Garg -- Compact analytical model for graphene field effect transistor : drift-diffusion approach / Abhishek Kumar Upadhyay, Siromani Balmukund Rahi -- Design of CNTFET-based ternary logic flip-flop and counter circuits using unary operators / Trapti Sharma -- Novel radiation hardened low power 12 transistors sram cell for aerospace application / Vancha Sharath Reddy, Arjun Singh Yadav, Soumya Sengupta -- Nanoscale CMOS static random access memory (SRAM) design : trends and challenges / Sunanda Ambulkar, Jeetendra Kumar Mishra -- Variants based Gate Modification (VGM) technique for reducing leakage power and short channel effect in DSM circuits / Uday Panwar, Ajay Kumar Dadoria -- A novel approach for high speed and low power by using nano-VLSI interconnects / Narendra Kumar Garg , Vivek Singh Kushwah, Ajay Kumar Dadoria.
  note: edited by Ankur Beohar, Ribu Mathew, Abhishek Kumar Upadhyay and Santosh Kumar Vishvakarma.
  note: Includes bibliographical references and index.
  subject:
    topic: Metal oxide semiconductor field-effect transistors
  subject:
    topic: Transistors MOSFET
  subject:
    topic: Materials science
  classification: TK7871.99.M44 A38 2024
  classification: 621.3815/284
  related item:
    title info:
      title: Advanced MOS devices and their circuit applications
    origin info:
      publisher: Boca Raton : CRC Press, Taylor & Francis Group, 2024
      edition: First edition.
    identifier: (DLC) 2023036436
  identifier: 9781032670270
  identifier: 1032670274
  identifier: 9781003831129
  identifier: 1003831125
  identifier: 9781032392851
  identifier: 9781032670263
  identifier: 1032392851
  identifier: 2023036437
  identifier: http://proxy.library.tamu.edu/login
  record info:
    record content source: DLC
    record creation date: 240107
    record change date: 20240913140058.1
    record identifier: in00005694321
    language of cataloging:
      language term: eng