Advanced MOS devices and their circuit applications /

Bibliographic Details
Corporate Author: EBSCOhost
Other Authors: Beohar, Ankur (Editor), Mathew, Ribu (Editor), Upadhyay, Abhishek Kumar (Editor), Vishvakarma, Santosh Kumar (Editor)
Format: eBook
Language:English
Published: Boca Raton : CRC Press, Taylor & Francis Group, 2024.
Edition:First edition.
Subjects:
Online Access:Connect to the full text of this electronic book

MARC

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245 0 0 |a Advanced MOS devices and their circuit applications /  |c edited by Ankur Beohar, Ribu Mathew, Abhishek Kumar Upadhyay and Santosh Kumar Vishvakarma. 
250 |a First edition. 
264 1 |a Boca Raton :  |b CRC Press, Taylor & Francis Group,  |c 2024. 
300 |a 1 online resource. 
336 |a text  |b txt  |2 rdacontent 
337 |a computer  |b c  |2 rdamedia 
338 |a online resource  |b cr  |2 rdacarrier 
504 |a Includes bibliographical references and index. 
505 0 |a An overview of DC/RF performance of nanosheet field effect transistor for future low power applications / Arun A V, Sajeesh M, Jobymol Jacob, J Ajayan -- Device design and analysis of 3D SCwRD cylindrical (Cyl) gate-all-around (GAA) tunnel FET using split-channel and spacer engineering / Ankur Beohar, Seema Tiwari, Kavita Khare, Santosh Kumar Vishvakarma -- Investigation of High-K dielectrics for single and multi-gate FETs / Sresta Valasa, Shubham Tayal, Laxman Raju Thoutam -- Measurement of back gate biasing for ultra low power subthreshold logic in FinFET device / Ajay Kumar Dadoria, Uday Panwar, Narendra Kumar Garg -- Compact analytical model for graphene field effect transistor : drift-diffusion approach / Abhishek Kumar Upadhyay, Siromani Balmukund Rahi -- Design of CNTFET-based ternary logic flip-flop and counter circuits using unary operators / Trapti Sharma -- Novel radiation hardened low power 12 transistors sram cell for aerospace application / Vancha Sharath Reddy, Arjun Singh Yadav, Soumya Sengupta -- Nanoscale CMOS static random access memory (SRAM) design : trends and challenges / Sunanda Ambulkar, Jeetendra Kumar Mishra -- Variants based Gate Modification (VGM) technique for reducing leakage power and short channel effect in DSM circuits / Uday Panwar, Ajay Kumar Dadoria -- A novel approach for high speed and low power by using nano-VLSI interconnects / Narendra Kumar Garg , Vivek Singh Kushwah, Ajay Kumar Dadoria. 
532 1 |3 EBSCOhost  |a "EBSCO evaluates our products based on the Web Content Accessibility Guidelines (WCAG) and the related Section 508 and EN 301 549 regulations in the US and EU. Most EBSCO products are substantially conformant with WCAG 2.2 level AA." Source: https://connect.ebsco.com/s/article/EBSCO-VPATs?language=en_US. Last accessed April 22, 2025. 
588 |a Description based on print version record and CIP data provided by publisher. 
650 0 |a Metal oxide semiconductor field-effect transistors. 
650 6 |a Transistors MOSFET. 
650 7 |a Materials science  |2 fast  |0 (OCoLC)fst01011957 
655 7 |a Electronic books.  |2 local 
700 1 |a Beohar, Ankur,  |e editor. 
700 1 |a Mathew, Ribu,  |e editor. 
700 1 |a Upadhyay, Abhishek Kumar,  |e editor. 
700 1 |a Vishvakarma, Santosh Kumar,  |e editor. 
710 2 |a EBSCOhost 
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