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Charge-based MOS transistor modeling : the EKV model for low-power and RF IC design /

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Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are...

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Bibliographic Details
Main Author: Enz, Christian
Other Authors: Vittoz, Eric A., 1938-
Format: eBook
Language:English
Published: Chichester, England ; Hoboken, NJ : John Wiley, ©2006.
Subjects:
Metal oxide semiconductors > Mathematical models.
Metal oxide semiconductor field-effect transistors > Mathematical models.
Electronic books.
Online Access:Connect to the full text of this electronic book
Table of Contents:
  • Charge-based MOS Transistor Modeling; Contents; Foreword; Preface; List of Symbols; 1 Introduction; 1.1 The Importance of Device Modeling for IC Design; 1.2 A Short History of the EKV MOS Transistor Model; 1.3 The Book Structure; 2 Definitions; 3 The Basic Charge Model; 4 Static Drain Current; 5 The Small-Signal Model; 6 The Noise Model; 7 Temperature Effects and Matching; 8 Nonideal Effects Related to the Vertical Dimension; 9 Short-Channel Effects; 10 The Extrinsic Model; 11 Equivalent Circuit at RF; 12 The Small-Signal Model at RF; 13 The Noise Model at RF; References; Index.