rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: Field-effect transistors technology
    sub title: from sustainability to next-generation VLSI design
  name:
    name part: Raman, Ashish
    role:
      role term: editor.
  name:
    name part: Singh, Prabhat
    role:
      role term: editor.
  name:
    name part: Kumar, Naveen
    name part: (PhD)
    role:
      role term: editor.
  name:
    name part: Singh, Sarabdeep
    role:
      role term: editor.
  name:
    name part: Taylor & Francis
  type of resource: text
  genre: Electronic books.
  origin info:
    place:
      place term: flu
    date issued: 2025
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: remote
    extent: 1 online resource (464 pages) : illustrations (black and white)
  abstract: The text provides a comprehensive exploration of the transitions occurring in the field-effect transistor technology, covering the historical evolution, current advancements, and future trends.Features Highlights the significance of field-effect transistors in VLSI and post-complementary metal-oxide-semiconductor design strategies. Discusses design challenges, different modeling aspects of field-effect transistors, and emerging materials in semiconductor design. Showcases the importance of simulation in forecasting device behavior, enhancing performance, and investigating novel device designs. Covers topics such as quantum computing, device simulation process on technology computer-aided design, carbon nanotubes, and organic field-effect transistors. The text is primarily written for senior undergraduates, graduate students, and academic researchers in the fields of electrical engineering, electrical and communications engineering, materials science, nanoscience, and nanotechnology.
  note: edited by Ashish Raman, Prabhat Singh, Naveen Kumar, Sarabdeep Singh.
  subject:
    topic: Field-effect transistors
  subject:
    topic: Integrated circuits
    topic: Very large scale integration
  subject:
    topic: Transistors à effet de champ
  subject:
    topic: Circuits intégrés à très grande échelle
  subject:
    topic: Field-effect transistors
  subject:
    topic: Integrated circuits
    topic: Very large scale integration
  classification: TK7871.95
  classification: 621.3815284
  identifier: 9781040662878
  identifier: 1040662870
  identifier: 9781003533535
  identifier: 1003533531
  identifier: 9781040519660
  identifier: 1040519660
  identifier: 9781032876078
  identifier: 9781003533535 Taylor & Francis
  identifier: http://proxy.library.tamu.edu/login
  record info:
    record content source: UKMGB
    record creation date: 251010
    record change date: 20260209220053.1
    record identifier: in00005684643
    language of cataloging:
      language term: eng