Field-effect transistors technology : from sustainability to next-generation VLSI design /

The text provides a comprehensive exploration of the transitions occurring in the field-effect transistor technology, covering the historical evolution, current advancements, and future trends.Features Highlights the significance of field-effect transistors in VLSI and post-complementary metal-oxide...

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Bibliographic Details
Corporate Author: Taylor & Francis
Other Authors: Raman, Ashish (Editor), Singh, Prabhat (Editor), Kumar, Naveen (PhD) (Editor), Singh, Sarabdeep (Editor)
Format: eBook
Language:English
Published: Boca Raton : CRC Press, 2025.
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Online Access:Connect to the full text of this electronic book
Description
Summary:The text provides a comprehensive exploration of the transitions occurring in the field-effect transistor technology, covering the historical evolution, current advancements, and future trends.Features Highlights the significance of field-effect transistors in VLSI and post-complementary metal-oxide-semiconductor design strategies. Discusses design challenges, different modeling aspects of field-effect transistors, and emerging materials in semiconductor design. Showcases the importance of simulation in forecasting device behavior, enhancing performance, and investigating novel device designs. Covers topics such as quantum computing, device simulation process on technology computer-aided design, carbon nanotubes, and organic field-effect transistors. The text is primarily written for senior undergraduates, graduate students, and academic researchers in the fields of electrical engineering, electrical and communications engineering, materials science, nanoscience, and nanotechnology.
Physical Description:1 online resource (464 pages) : illustrations (black and white)
ISBN:9781040662878
1040662870
9781003533535
1003533531
9781040519660
1040519660