rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: Nonvolatile memory design
    sub title: magnetic, resistive, and phase change
  name:
    name part: Li, Hai
    name part: 1975-
    role:
      role term: creator
  name:
    name part: Chen, Yiran
    name part: 1976-
  name:
    name part: Taylor & Francis
  type of resource: text
  genre: bibliography
  genre: Electronic books.
  origin info:
    place:
      place term: flu
    place:
      place term: Boca Raton, Fla
    publisher: Taylor & Francis
    date issued: ©2012
    date issued: 2012
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: remote
    extent: 1 online resource (200 pages)
  abstract: The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances.
  table of contents: Front Cover; Contents; Preface; Author Biographies; Chapter 1: Introduction to Semiconductor Memories; Chapter 2: Phase Change Memory; Chapter 3: Spin-Transfer Torque RAM; Chapter 4: Resistive Random Access Memory; Chapter 5: Memristors; Chapter 6: The Future of Nonvolatile Memory; Back Cover.
  note: Hai Li, Yiran Chen.
  note: Includes bibliographical references.
  note: English.
  subject:
    topic: Semiconductor storage devices
  subject:
    topic: Magnetic memory (Computers)
  subject:
    topic: Flash memories (Computers)
  subject:
    topic: Change of state (Physics)
    topic: Industrial applications
  subject:
    topic: Ordinateurs
    topic: Mémoires à semi-conducteurs
  subject:
    topic: Ordinateurs
    topic: Mémoires magnétiques
  subject:
    topic: Ordinateurs
    topic: Mémoires flash
  subject:
    topic: Changement d'état (Physique)
    topic: Applications industrielles
  subject:
    topic: Flash memories (Computers)
  subject:
    topic: Magnetic memory (Computers)
  subject:
    topic: Semiconductor storage devices
  classification: TK7895.M4 L385 2012
  classification: 004.568 621.39732
  identifier: 1280121599
  identifier: 9781280121593
  identifier: 9786613525451
  identifier: 6613525456
  identifier: 1439807469
  identifier: 9781439807460
  identifier: 1439807450
  identifier: 9781439807453
  identifier: 2011046210
  identifier: http://proxy.library.tamu.edu/login
  record info:
    record content source: AU@
    record creation date: 111208
    record change date: 20260205202955.1
    record identifier: in00005680207
    language of cataloging:
      language term: eng