Nonvolatile memory design : magnetic, resistive, and phase change /

The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Chan...

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Bibliographic Details
Main Author: Li, Hai, 1975-
Corporate Author: Taylor & Francis
Other Authors: Chen, Yiran, 1976-
Format: eBook
Language:English
Language Notes:English.
Published: Boca Raton, Fla. : Taylor & Francis, ©2012.
Subjects:
Online Access:Connect to the full text of this electronic book
Description
Summary:The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances.
Physical Description:1 online resource (200 pages)
Bibliography:Includes bibliographical references.
ISBN:1280121599
9781280121593
9786613525451
6613525456
1439807469
9781439807460
1439807450
9781439807453