rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: Measurement and modeling of silicon heterostructure devices
  name:
    name part: Cressler, John D.
  name:
    name part: Taylor & Francis
  type of resource: text
  genre: bibliography
  genre: Electronic books.
  origin info:
    place:
      place term: flu
    place:
      place term: Boca Raton, FL
    publisher: CRC Press
    date issued: ©2008
    date issued: 2008
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: remote
    extent: 1 online resource (200 pages) : illustrations
  abstract: When you see a nicely presented set of data, the natural response is: "How did they do that; what tricks did they use; and how can I do that for myself?" Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged. Shamefully ignored in the technical literature, measurement and modeling of high-speed semiconductor devices is a fine art. Robust measuring and modeling at the levels of performance found in modern SiGe devices requires extreme dexterity in the laboratory to obtain reliable data, and then a valid model to fit.
  table of contents: Chapter 001 Best-Practice AC Measurement Techniques ... 4- -- chapter 002 A Brief History of the Field -- chapter 003 Overview: Measurement and Modeling -- chapter 004 Best-Practice AC Measurement Techniques -- chapter 005 Industrial Application of TCAD for SiGe Development -- chapter 006 Compact Modeling of SiGe HBTs: HICUM -- chapter 007 Compact Modeling of SiGe HBTs: Mextram -- chapter 008 CAD Tools and Design Kits -- chapter 009 Parasitic Modeling and Noise Mitigation Approaches in Silicon Germanium RF Designs -- chapter 010 Transmission Lines on Si -- chapter 011 Improved De-Embedding Techniques.
  note: edited by John D. Cressler.
  note: Includes bibliographical references and index.
  subject:
    topic: Bipolar transistors
    topic: Mathematical models
  subject:
    topic: Bipolar transistors
  subject:
    topic: Heterostructures
  subject:
    topic: Integrated circuits
    topic: Design and construction
  subject:
    topic: Transistors bipolaires
    topic: Modèles mathématiques
  subject:
    topic: Transistors bipolaires
  subject:
    topic: Hétérostructures
  subject:
    topic: Circuits intégrés
    topic: Conception et construction
  subject:
    topic: Bipolar transistors
  subject:
    topic: Bipolar transistors
    topic: Mathematical models
  subject:
    topic: Heterostructures
  subject:
    topic: Integrated circuits
    topic: Design and construction
  classification: TK7871.96.B55 M33 2008
  classification: 621.38152 M484
  identifier: 9781420066937
  identifier: 1420066935
  identifier: 9781315218878
  identifier: 1315218879
  identifier: 9781351826075
  identifier: 1351826077
  identifier: 9781420066920
  identifier: http://proxy.library.tamu.edu/login
  record info:
    record content source: CAUOI
    record creation date: 070725
    record change date: 20260205202346.1
    record identifier: in00005679557
    language of cataloging:
      language term: eng