http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
Measurement and modeling of silicon heterostructure devices
1 online resource (200 pages) : illustrations
When you see a nicely presented set of data, the natural response is: "How did they do that; what tricks did they use; and how can I do that for myself?" Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged. Shamefully ignored in the technical literature, measurement and modeling of high-speed semiconductor devices is a fine art. Robust measuring and modeling at the levels of performance found in modern SiGe devices requires extreme dexterity in the laboratory to obtain reliable data, and then a valid model to fit.
Chapter 001 Best-Practice AC Measurement Techniques ... 4- -- chapter 002 A Brief History of the Field -- chapter 003 Overview: Measurement and Modeling -- chapter 004 Best-Practice AC Measurement Techniques -- chapter 005 Industrial Application of TCAD for SiGe Development -- chapter 006 Compact Modeling of SiGe HBTs: HICUM -- chapter 007 Compact Modeling of SiGe HBTs: Mextram -- chapter 008 CAD Tools and Design Kits -- chapter 009 Parasitic Modeling and Noise Mitigation Approaches in Silicon Germanium RF Designs -- chapter 010 Transmission Lines on Si -- chapter 011 Improved De-Embedding Techniques.
Includes bibliographical references and index.