rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: Introduction to nanoelectronic single-electron circuit design
  name:
    name part: Hoekstra, Jaap.
    role:
      role term: creator
  name:
    name part: World Scientific (Firm)
  name:
    name part: Taylor & Francis
  type of resource: text
  genre: bibliography
  genre: Electronic books.
  origin info:
    place:
      place term: si
    place:
      place term: Singapore
    publisher: Pan Stanford Pub. Pte. Ltd.
    date issued: ©2010
    date issued: 2010
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: remote
    extent: 1 online resource (xv, 301 pages) : illustrations
  abstract: In Introduction to Nanoelectronic Single-electron Circuit Design, single-electron circuits are studied as an introduction to the rapidly expanding field of nanoelectronics. Treated are both the analysis and synthesis of circuits with the nanoelectronic metallic single-electron tunneling (SET) junction device. The basic physical phenomena under consideration are the quantum mechanical tunneling of electrons through a small insulating gap between two metal leads, the Coulomb blockade, and Coulomb oscillations - the last two resulting from the quantization of charge. While electron transport in nanoelectronic devices can best be described by quantum physics; nanoelectronic circuits can best be described by Kirchhoff's voltage and current laws. The author employs an unconventional approach in explaining the operation and design of single-electron circuits. All models and equivalent circuits are derived from first principles of circuit theory. This is a must if we want to understand the characteristics of the nanoelectronic devices and subcircuits. Besides this, a circuit theoretical approach is necessary for considering possible integration in current and future IC technology. Based on energy conservation, in circuit theory connected to Tellegen's theorem, the circuit model for single-electron tunneling is an impulsive current source. Modeling distinguishes between bounded and unbounded currents. The Coulomb blockade is explained as a property of a tunnel junction, not of an island.
  table of contents: 1. Introduction. 1.1. Scope. 1.2. Electron tunneling. 1.3. Tunneling capacitors and island charges. 1.4. Energy in simple capacitor circuits, bounded and unbounded currents. 1.5. Operational temperature. 1.6. Research questions -- 2. Tunneling experiments in nanoelectronics. 2.1. Tunneling in the tunnel diode. 2.2. Tunneling capacitor -- 3. Current in electrodynamics and circuit theory. 3.1. Charges in electrodynamics. 3.2. Conservation of charge and continuity equation. 3.3. Electromagnetics' field equations in vacuum. 3.4. Equations in the presence of charges and currents. 3.5. Conservation of energy and Poynting's theorem. 3.6. Steady-state and constant currents. 3.7. Time-dependent current flow. 3.8. Towards circuit theory -- 4. Free electrons in quantum mechanics. 4.1. Particles, fields, wave packets, and uncertainty relations. 4.2. Schrödinger's equation. 4.3. Free electrons. 4.4. Free electrons meeting a boundary. 4.5. Electrons in potential wells -- 5. Current and tunnel current in quantum physics. 5.1. Electrical conductivity in metals. 5.2. Current in quantum physics. 5.3. Tunneling and tunnel current. 5.4. Shrinking dimensions and quantized conductance -- 6. Energy in circuit theory. 6.1. Lumped circuits. 6.2. Circuit theorems -- 7. Energy in the switched two-capacitor circuit. 7.1. Problem statement. 7.2. Continuity property in linear networks. 7.3. Unbounded currents. 7.4. Zero initial capacitor voltage (zero state). 7.5. Initial charge models. 7.6. Solution A : bounded currents. 7.7. Solution B : unbounded currents. 7.8. Unbounded or bounded currents through circuits -- 8. Impulse circuit model for single-electron tunneling -- zero tunneling time. 8.1. SET junction excited by an ideal current source -- zero tunneling time. 8.2. SET junction excited by an ideal voltage source. 8.3. Basic assumptions. 8.4. Conditions for tunneling. 8.5. Tunnel condition : mathematical formulation -- 9. Impulse circuit model for single-electron tunneling -- nonzero tunnel…
  note: Jaap Hoekstra.
  note: Includes bibliographical references (pages 289-292) and index.
  subject:
    topic: Nanoelectronics
  subject:
    topic: Integrated circuits
    topic: Design and construction
  subject:
    topic: Nanoélectronique
  subject:
    topic: Circuits intégrés
    topic: Conception et construction
  subject:
    topic: Integrated circuits
    topic: Design and construction
  subject:
    topic: Nanoelectronics
  classification: TK7874.84 .H64 2010
  classification: 621.381
  identifier: 9789814267632
  identifier: 9814267635
  identifier: 9789814241632
  identifier: 9814241636
  identifier: 9780429067136
  identifier: 0429067135
  identifier: 9814241938
  identifier: 9789814241939
  identifier: TANDF_242947 Ingram Content Group
  identifier: http://proxy.library.tamu.edu/login
  record info:
    record content source: LLB
    record creation date: 100524
    record change date: 20260205201805.6
    record identifier: in00005679066
    language of cataloging:
      language term: eng