rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: Growing and Forming of Semiconductor Layers
    sub title: Special topic volume with invited peer-reviewed papers only
  name:
    name part: Riccio, Michele
    role:
      role term: editor.
  name:
    name part: Irace, Andrea
    role:
      role term: editor.
  name:
    name part: Breglio, Giovanni
    role:
      role term: editor.
  name:
    name part: Knovel (Firm)
  type of resource: text
  genre: bibliography
  genre: Electronic books.
  origin info:
    place:
      place term: sz
    date issued: 2024
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: remote
    extent: 1 online resource.
  abstract: Advanced semiconductor technologies have been making significant advancements through the creation and application of new materials and processes that surpass traditional silicon's limitations. The wide-bandgap semiconductors such as Silicon Carbide and Gallium Nitride offer unprecedented opportunities for advancements in high-power and high-frequency microelectronic devices. The presented special edition will be useful to engineers and researchers whose activity is related to technologies of semiconductor structures growth for power electronics and microelectronics devices production. Gallium Nitride, Substrate, Wafer, Layer Growth, Silicon Carbide, Crystal Growth, Boron Carbide, Chemical Vapour Deposition, Heteroepitaxial Growth, MOSFET Materials Science, Electronics, Nanoscience.
  target audience: specialized
  note: edited by Prof. Michele Riccio, Prof. Andrea Irace and Prof. Giovanni Breglio.
  note: Includes bibliographical references and index.
  subject:
    topic: Boron Carbide
  subject:
    topic: Chemical Vapour Deposition
  subject:
    topic: Crystal Growth
  subject:
    topic: Gallium Nitride
  subject:
    topic: Heteroepitaxial Growth
  subject:
    topic: Layer Growth
  subject:
    topic: MOSFET
  subject:
    topic: Silicon Carbide
  subject:
    topic: Substrate
  subject:
    topic: Wafer
  related item:
    title info:
      title: Solid State Phenomena Vol. 362
  identifier: 9783036416311
  identifier: 3036416315
  identifier: http://proxy.library.tamu.edu/login
  record info:
    record content source: TTECH
    record creation date: 240827
    record change date: 20250113201302.5
    record identifier: in00005612916
    language of cataloging:
      language term: eng