http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
Growing and Forming of Semiconductor Layers
Special topic volume with invited peer-reviewed papers only
Advanced semiconductor technologies have been making significant advancements through the creation and application of new materials and processes that surpass traditional silicon's limitations. The wide-bandgap semiconductors such as Silicon Carbide and Gallium Nitride offer unprecedented opportunities for advancements in high-power and high-frequency microelectronic devices. The presented special edition will be useful to engineers and researchers whose activity is related to technologies of semiconductor structures growth for power electronics and microelectronics devices production. Gallium Nitride, Substrate, Wafer, Layer Growth, Silicon Carbide, Crystal Growth, Boron Carbide, Chemical Vapour Deposition, Heteroepitaxial Growth, MOSFET Materials Science, Electronics, Nanoscience.
edited by Prof. Michele Riccio, Prof. Andrea Irace and Prof. Giovanni Breglio.
Includes bibliographical references and index.