rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: Nanocrystals in nonvolatile memory
  name:
    name part: Banerjee, Writam
    role:
      role term: editor.
  name:
    name part: Taylor & Francis
  type of resource: text
  genre: bibliography
  genre: Electronic books.
  origin info:
    place:
      place term: si
    date issued: 2024
    edition: Second edition.
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: remote
    extent: 1 online resource : illustrations
  abstract: "In recent years, utilization of the abundant advantages of quantum physics, quantum dots, quantum wires, quantum wells, and nanocrystals has attracted considerable scientific attention in the field of nonvolatile memory. Nanocrystals are the driving element that have brought the nonvolatile flash memory technology to a distinguished height. However, new approaches are still required to strengthen this technology for future applications. This book details the methods of fabrication of nanocrystals and their application in baseline nonvolatile memory and emerging nonvolatile memory technologies. The chapters have been written by renowned experts of the field and will provide an in-depth understanding of these technologies. The book is a valuable tool for research and development sectors associated with electronics, semiconductors, nanotechnology, material sciences, solid state memories, and electronic devices."--
  table of contents: Nanocrystal materials, fabrications, and characterizations / Sujan Chowdhury, Puspendu Barik -- Modeling and simulation of nanocrystal flash memory / Bikash Sharma, Chandan Kumar Sarkar -- Charge trapping and high-k nanocrystal flash memory / Meng Chuan Lee, Hin Yong Wong -- Silicon nanocrystal flash memory / Lili Zhao, Tiezheng Lv, Guofeng Fan -- Synthesis, characterization, and memory application of germanium nanocrystals in dielectric matrices / Wee Kiong Choi, Writam Banerjee -- Nanographene flash memory / Jianling Meng, Rong Yang, Guangyu Zhang -- Data recovery of flash memory / Bernard Kasamani Shibwabo, Ismail Ateya Lukandu -- Nanocrystals in resistive random access memory / Writam Banerjee, Qi Liu -- Measurement aspects of nonvolatile memory / Alberto Campisi.
  target audience: adult
  note: edited by Writam Banerjee.
  note: "Jenny Stanford Publishing"
  note: Includes bibliographical references and index.
  note: Writam Banerjee is principal engineer of technology development for emerging nonvolatile memories at GlobalFoundries, Dresden, Germany. He earned his master's and doctorate degrees in physics and semiconductor devices, respectively. He worked at various academic positions for nearly 13 years in the area of emerging nonvolatile memory technology before joining GlobalFoundries in 2021. Dr. Banerjee has authored or co-authored over 100 scientific publications and is a senior member of IEEE and an editorial board member of Nature Portfolio journals.
  subject:
    topic: Nonvolatile random-access memory
  subject:
    topic: Nanocrystals
  subject:
    topic: Microelectronics
  subject:
    topic: Ordinateurs
    topic: Mémoires vives non volatiles
  subject:
    topic: Nanocristaux
  subject:
    topic: Microélectronique
  subject:
    topic: microelectronics
  subject:
    topic: TECHNOLOGY / Electronics / Microelectronics
  subject:
    topic: SCIENCE / Physics
  subject:
    topic: TECHNOLOGY / Nanotechnology
  classification: TK7895.M4
  classification: 621.39/73
  identifier: 9781003514862
  identifier: 1003514863
  identifier: 9789815129359
  identifier: 9781040119105
  identifier: 1040119107
  identifier: 9781040119112
  identifier: 1040119115
  identifier: 9781003514862 Taylor & Francis
  identifier: http://proxy.library.tamu.edu/login
  record info:
    record content source: TYFRS
    record creation date: 240605
    record change date: 20241108170137.6
    record identifier: in00005526788
    language of cataloging:
      language term: eng