rdf-syntax-grammar
mods:
  schema location: http://www.loc.gov/mods/v3 http://www.loc.gov/standards/mods/v3/mods-3-2.xsd
  title info:
    title: High-k materials in multi-gate FET devices
  title info:
    title: High-k materials in multi-gate field-effect transistor devices
  name:
    name part: Tayal, Shubham
    role:
      role term: editor.
  name:
    name part: Taylor & Francis
  type of resource: text
  genre: bibliography
  genre: Electronic books.
  origin info:
    place:
      place term: flu
    date issued: 2021
    copyright date: 2022
    edition: First edition.
    issuance: monographic
  language:
    language term: eng
  physical description:
    form: remote
    extent: 1 online resource (xii, 164 pages) : illustrations.
  abstract: "This book focuses on high-k materials for advanced FET devices. It discusses emerging challenges in the engineering and applications and considers issues with associated technologies. This work will be of high interest to researchers in materials science, electronics engineering, IT, and related disciplines studying nanodevices such as FinFET and Tunnel FET and device-circuit codesign issues"--
  table of contents: Introduction to multi-gate FET devices / T. S. Arulananth, S. V. S. Prasad, and K. Srinivas Rao -- High-k gate dielectrics and metal gate stack technology for advance semiconductor devices : an overview / Vibhu Goyal, Shubham Tayal, Shweta Meena, Ravi Gupta, and Sandip Bhattacharya -- Influence of high-k material in gate engineering and in multi-gate field effect transistor devices / C. Usha and P. Vimala -- Trap charges in high-k and stacked dielectric / Annada Shankar Lenka and Prasanna Kumar Sahu -- Impact of high-k dielectric on the gate-induced drain leakage of multi-gate FETs / Varshini K. Amirtha and Shubham Sahay -- Advanced FET design using high-k gate dielectric and characterization for low-power VLSI / P. Vimala and T. S. Arun Samuel -- Simulation and analysis of gate stack DG MOSFET with application of high-k dielectric using visual TCAD / Nisha Yadav, Sunil Jadav, and Gaurav Saini -- Novel architecture in gate all-around (GAA) MOSFET with high-k dielectric for biomolecule detection / Krutideepa Bhol, Biswajit Jena, Umakanta Nanda, Shubham Tayal, and Amit Kumar Jain -- Asymmetric junctionless transistor : a SRAM performance study / Gaurav Saini and Trailokya Nath Sasamal -- Performability analysis of high-k dielectric-based advanced MOSFET in lower technology / Nodes Manoj Angara, Biswajit Jena, and Ayodeji Olalekan Salau.
  note: edited by Shubham Tayal, Parveen Singla, and J. Paulo Davim.
  note: Includes bibliographical references and index.
  note: Dr. Shubham Tayal is Assistant Professor, Department of Electronics and Communication Engineering, SR University, Warangal, India. He completed his Ph.D in VLSI from NIT, Kurukshetra. He has contributed 14 (10 - SCI/SCIE, 04 - Others) research papers in international journals, 2 research papers to IEEE Conferences, and 2 research papers to other national conferences. His research interests include simulation and modelling of multi-gate semiconductor devices, device-circuit co-design in digital/analog domain, and low power VLSI design. Dr. Parveen Singla is Professor in Electronics & Communication Engineering, Department of Chandigarh Engineering College- Chandigarh Group of Colleges, Landran, Mohali, Punjab. He did his Bachelor of Engineering in Electronics & Communication Engineering with honors from Maharishi Dayanand University, Rohtak, Master in Technology in Electronics & Communication Engineering with honors from Kurukshetra University, Kurukshetra & PhD in Communication Systems from IKG Punjab Technical University, Jalandhar, India. He has 16 years of experience in the field of teaching and research. He has published more than 35 papers in various reputed journals and national and international conferences. He also organised more than 30 technical events for students in order to enhance their technical skills and received Best International Technical Event Organiser Award. He is the guest editor of various reputed journals. His interest area includes drone technology, wireless networks, smart antennas and soft computing. Dr. J. Paulo Davim received his Ph.D. degree in Mechanical Engineering in 1997, M.Sc. degree in Mechanical Engineering (materials and manufacturing processes) in 1991, Mechanical Engineering degree (5 years) in 1986, from the University of Porto (FEUP), the Aggregate title (Full Habilitation) from the University of Coimbra in 2005 and the D.Sc. (Higher Doctorate) from London Metropolitan University in 2013. He is Senior Chartered Engineer by …
  subject:
    topic: Electrochemistry
  subject:
    topic: Électrochimie
  subject:
    topic: TECHNOLOGY / Electronics / Microelectronics
  subject:
    topic: Electrochemistry
  classification: QD551 .H54 2021
  classification: 537/.24
  related item:
    title info:
      title: High-k Materials in Multi-Gate FET Devices
    origin info:
      publisher: Boca Raton : CRC Press, 2021
    identifier: (DLC) 2021029732
    identifier: (OCoLC)1242464840
  related item:
    title info:
      title: Science, technology, and management series
  identifier: 9781003121589
  identifier: 1003121586
  identifier: 9781000438789
  identifier: 1000438783
  identifier: 9781000438819
  identifier: 1000438813
  identifier: 9780367639686
  identifier: 9780367639693
  identifier: 0367639688
  identifier: 2021029733
  identifier: 9781000438819 Ingram Content Group
  identifier: 9781003121589 Taylor & Francis
  identifier: http://proxy.library.tamu.edu/login
  record info:
    record content source: DLC
    record creation date: 210617
    record change date: 20241108165927.4
    record identifier: in00005524917
    language of cataloging:
      language term: eng